1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Crystalline silicon surface passivation by intrinsic silicon thin films deposited by low-frequency inductively coupled plasma
Rent:
Rent this article for
USD
10.1063/1.4733701
/content/aip/journal/jap/112/1/10.1063/1.4733701
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4733701
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The UV transmission spectra of the thin films deposited at various RF powers on glass substrate. The thickness of the films is in the range of 250–635 nm.

Image of FIG. 2.
FIG. 2.

RF power dependent optical band gap (filled squares) and average deposition rate (filled circles).

Image of FIG. 3.
FIG. 3.

The Raman spectra of the thin films deposited at different RF powers.

Image of FIG. 4.
FIG. 4.

Gaussian-shaped curve deconvolution of the Raman spectrum of the thin film deposited at RF powers of 1.8 kW. The inset shows the RF power dependent crystallinity of the thin films.

Image of FIG. 5.
FIG. 5.

FTIR absorption spectra of the thin films deposited at different RF powers.

Image of FIG. 6.
FIG. 6.

The RF power dependent hydrogen content (filled squares) and Si-H wagging/rocking mode location (filled circles).

Image of FIG. 7.
FIG. 7.

RF power dependent minority carrier lifetime (filled squares) and incubation layer thickness (open squares). The inset shows the passivation scheme for the lifetime measurement.

Image of FIG. 8.
FIG. 8.

The minority carrier lifetime of the sample exposed to H2 plasma for different time before the passivation layer deposition.

Image of FIG. 9.
FIG. 9.

The cross-sectional SEM images of the thin films deposited at RF power of 1.2 kW (a), 1.5 kW (b), 1.8 kW (c), and 2.0 k W (d). Evident incubation layers were observed at the interfaces.

Image of FIG. 10.
FIG. 10.

The minority carrier lifetime of the sample annealed at different temperatures in vacuum.

Image of FIG. 11.
FIG. 11.

The FTIR transmission spectra (550–950 cm−1) of the as-deposited sample and that annealed at 420 °C and 500 °C. Increase in the annealing temperature from 420 °C to 500 °C leads to the decreasing hydrogen content in the film.

Image of FIG. 12.
FIG. 12.

The minority carrier lifetime as a function of annealing duration at 420 °C at atmosphere of vacuum (filled squares) and H2 flow (filled circles).

Image of FIG. 13.
FIG. 13.

The injection level dependent surface recombination velocity of the as-deposited sample and that annealed at different temperatures.

Image of FIG. 14.
FIG. 14.

A typical cross-sectional TEM micrograph of LFICP-grown μc-Si:H films on Si substrate at low (a) and high (b) magnification.

Image of FIG. 15.
FIG. 15.

The dark and illuminated I-V curves of the heterojunction solar cell with a forward intrinsic silicon passivation layer deposited at discharge power of 2.0 kW using the LFICP method.

Loading

Article metrics loading...

/content/aip/journal/jap/112/1/10.1063/1.4733701
2012-07-06
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystalline silicon surface passivation by intrinsic silicon thin films deposited by low-frequency inductively coupled plasma
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4733701
10.1063/1.4733701
SEARCH_EXPAND_ITEM