The UV transmission spectra of the thin films deposited at various RF powers on glass substrate. The thickness of the films is in the range of 250–635 nm.
RF power dependent optical band gap (filled squares) and average deposition rate (filled circles).
The Raman spectra of the thin films deposited at different RF powers.
Gaussian-shaped curve deconvolution of the Raman spectrum of the thin film deposited at RF powers of 1.8 kW. The inset shows the RF power dependent crystallinity of the thin films.
FTIR absorption spectra of the thin films deposited at different RF powers.
The RF power dependent hydrogen content (filled squares) and Si-H wagging/rocking mode location (filled circles).
RF power dependent minority carrier lifetime (filled squares) and incubation layer thickness (open squares). The inset shows the passivation scheme for the lifetime measurement.
The minority carrier lifetime of the sample exposed to H2 plasma for different time before the passivation layer deposition.
The cross-sectional SEM images of the thin films deposited at RF power of 1.2 kW (a), 1.5 kW (b), 1.8 kW (c), and 2.0 k W (d). Evident incubation layers were observed at the interfaces.
The minority carrier lifetime of the sample annealed at different temperatures in vacuum.
The FTIR transmission spectra (550–950 cm−1) of the as-deposited sample and that annealed at 420 °C and 500 °C. Increase in the annealing temperature from 420 °C to 500 °C leads to the decreasing hydrogen content in the film.
The minority carrier lifetime as a function of annealing duration at 420 °C at atmosphere of vacuum (filled squares) and H2 flow (filled circles).
The injection level dependent surface recombination velocity of the as-deposited sample and that annealed at different temperatures.
A typical cross-sectional TEM micrograph of LFICP-grown μc-Si:H films on Si substrate at low (a) and high (b) magnification.
The dark and illuminated I-V curves of the heterojunction solar cell with a forward intrinsic silicon passivation layer deposited at discharge power of 2.0 kW using the LFICP method.
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