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Formation of stress-controlled, highly textured, α-SiC thin films at 950 °C
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10.1063/1.4733967
/content/aip/journal/jap/112/1/10.1063/1.4733967
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4733967

Figures

Image of FIG. 1.
FIG. 1.

Standard θ − 2θ XRD scan for a SiC film deposited with RT = 0.464. Only one diffraction peak is observed (∼35.6° 2θ) over the range of data collection, suggesting a highly out-of-plane-textured film.

Image of FIG. 2.
FIG. 2.

(a) Pole figure contour plot collected for peak observed at ∼35.6° 2θ, for RT = 0.464 sample. The pole figure may be indexed as a mixture of 6H(102) + 6H(006) + 3C(111) diffracted intensity. Superimposed scaling rings are χ = 15° steps. (b) Ivχ plot derived from above pole figure data. (c) 3D pole figure representation of 6H(102) + (006) and 3C(111) scattered intensity plotted using a log scale intensity to enhance the ring of intensity at χ ∼ 70°.

Image of FIG. 3.
FIG. 3.

(a) Pole figure contour plot for SiC 6H(103), for RT = 0.464 sample. A strong ring of intensity is observed at χ ∼ 62°. Superimposed scaling rings are χ = 15° steps. (b) Ivχ plot derived from above pole figure data. (c) 3D pole figure representation of 6H(103) scattered intensity to illustrate the continuous outer-ring at χ ∼ 62°, with absence of central scattering intensity.

Image of FIG. 4.
FIG. 4.

(a) Pole figure contour plot for SiC 6H(100), for RT = 0.464 sample. A strong ring of intensity is observed at the highest χ angles. Superimposed scaling rings are χ = 15° steps. (b) Ivχ plot derived from above pole figure data. (c) 3D pole figure representation of 6H(100) scattered intensity to illustrate better illustrate the fast rise in scattered intensity as χ approaches the maximum measured tilt angle of 80°.

Image of FIG. 5.
FIG. 5.

(a) Pole figure contour plot for SiC 6H(104) + 3C(200), for RT = 0.464 sample. A weak ring of intensity is observed at χ ∼ 45°. Superimposed scaling rings are χ = 15° steps. (b) Ivχ plot derived from above pole figure data. (c) 3D pole figure representation of 6H(104) + 3C(200) scattered intensity. This figure shows the weak nature of scattering from these possible diffraction planes.

Image of FIG. 6.
FIG. 6.

Variation in σR, σi, and Vα as a function of RT.

Image of FIG. 7.
FIG. 7.

Dependence of σi on Vα. Solid line represents the Eqs. (5a) and (5b) fits to the experimental data. The dotted and dashed lines reflect Cheng’s calculated values26 for the transverse and longitudinal stress, respectively, for mixed single crystal SiC polytypes, subject to the noted constraints.

Tables

Generic image for table
Table I.

Experimentally determined values, from 6 samples, for the gas flow ratio, RT, deposition rate, Rd, total film thickness, d, residual stress, σR, thermal expansion coefficient, α, thermal stress, σth, intrinsic stress, σi, and polytype parameter, Vα.

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/content/aip/journal/jap/112/1/10.1063/1.4733967
2012-07-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of stress-controlled, highly textured, α-SiC thin films at 950 °C
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4733967
10.1063/1.4733967
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