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Poisoning of magnetism in silicon doped with Re, caused by a charge transfer from interstitials to substitutionals, by means of the self-interaction corrected density-functional approach
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10.1063/1.4734000
/content/aip/journal/jap/112/1/10.1063/1.4734000
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4734000
/content/aip/journal/jap/112/1/10.1063/1.4734000
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/content/aip/journal/jap/112/1/10.1063/1.4734000
2012-07-12
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Poisoning of magnetism in silicon doped with Re, caused by a charge transfer from interstitials to substitutionals, by means of the self-interaction corrected density-functional approach
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/1/10.1063/1.4734000
10.1063/1.4734000
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