Model geometry for (a) etched NWs and (b) VLS NWs.
Measured (a) and (c) and simulated (b) and (d) reflectance spectra for the GaAs substrate, samples A-H, and VLS NWs.
Measured (filled squares) and calculated (open squares) solar weighted reflectance of GaAs substrate, samples A-H, and the VLS NWs.
Simulations of (a) solar weighted reflectance and (b) solar weighted absorptance for NW length of 3 μm on a substrate of infinite thickness.
Simulations of photocurrent density (a) with infinite substrate and (b) without substrate for NW length of 3 μm.
NW, substrate, and total photocurrent density versus NW length obtained at D = 180 nm and P = 350 nm.
Optical constants (a) n and (b) k of cyclotene and ITO. (b) Photocurrent density for polymer-filled and ITO-contacted NW with L = 3 μm.
Etched and VLS nanowire parameters.
Maximum photocurrent density for various NW array configurations.
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