SEM micrographs with the inset showing the Raman spectra for UNCD films grown on (a) bare Si and (b) Au-coated Si substrates.
(a) EFE properties (log J-E curves) and (b),(c) electrical resistance (current-voltage curves) measured by four probes for UNCD films grown on (I) bare Si and (II) Au-coated Si substrates. In (b),(c), the current was either flowing (b) across the UNCD-to-Si interface (i.e., with two of the probes on the surface of the diamond films and two on the Si substrates, inset) or (c) along the surface of the films (i.e., with all four probes on the same surface of the films, inset).
Cross-sectional TEM bright-field images of UNCD films grown on (a) bare Si and (c) Au-coated Si substrates, with insets showing the corresponding SAED; cross-sectional TEM structure images for (b) UNCD/Si and (d) UNCD/Au/Si films, with the insets showing the Fourier-transform diffractograms associated with each whole-structure images (FT0c and FT0d) or the designated areas (FT1–FT5) of the films.
Composed DF images, which are superpositions of dark-field images for diamond, SiC, a-C, and Si, for UNCD films grown on (a) bare Si and (b)Au-coated Si substrates.
EELS spectra of UNCD films grown on (a) bare Si and (b) Au-coated Si substrates. The insets show the locations at which the EELS profiles were acquired.
(a) Cross-sectional STEM bright-field images of UNCD/Au/Si films; (b) EDAX linear scan with Si, Au, and C elemental profiles, along the lines designated as “I” and “II” in (a); (c) HAADF images and (d) EELS mapping of the regions corresponding to (a).
TEM bright-field micrograph of UNCD films grown on Au-Si substrates; (a) surface region and (b) interface region, with insets showing the corresponding SAED patterns; (c) linear diffraction patterns deduced from each SAED, showing the presence of SiC and i-carbon phases besides diamond, in the interface region (spectrum II) but only the diamond ring in the surface region (spectrum I).
c-DF micrographs for UNCD films grown on Au-Si substrates. (a)surface region; (b) interface region.
TEM structure images of surface region of UNCD films grown on Au-Si substrates, corresponding to the areas designated in Fig. 7(a). (a) area A; (b) area B; (c) area C.
TEM structure images of interface region of UNCD films grown on Au-Si substrates corresponding to the areas designated in Fig. 7(b). (a) area D; (b) enlarged TEM bright-field micrograph of a typical region in area E; (c) TEM structure images of area E in interface region.
(a) STEM bright-field micrograph of the same interfacial region in UNCD/Au-Si films as the one shown in Fig. 7(b); (b) corresponding HAADF image; (c) EDAX spectra corresponding to the regions designated in (a).
(a) Stereographic projection and (b) X-Y and (c) Y-Z projections of 3D-tomography showing the distribution of SiC and other clusters in UNCD/Au-Si films.
Electrical and EFE properties of UNCD films grown on bare Si or Au-coated Si substrates.
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