Temperature dependence of the Gibbs free energy of formation per one O2 mole of various transition metal oxides.35
(a) Glancing angle X-ray diffraction patterns of Sb2O5 films on Pt/Ti/SiO2/Si substrate, and (b) cross-section TEM image of Pt/Sb2O5/Pt structure.
(a) XPS Sb 3 d (left panel) and Pt 4f (right panel) depth profiling spectra for Pt/Sb2O5/Pt structure. (b) The XPS Sb 3 d (left panel) and Pt 4f (right panel) depth profiling spectra of Sb/Sb2O5/Pt structure.
AES depth profiles results of (a) Pt/Sb2O5/Pt and (b) Sb/Sb2O5/Pt structures.
(a) The URS I-V results and (b) electrical endurance characteristics of Pt/Sb2O5/Pt structure.
(a) The URS I-V characteristics of the Sb/Sb2O5/Pt structure. Inset figure shows the I-V result of SSP and PSP structures during electroforming process. (b) The electrical endurance characteristics of SSP structure.
(a) The electroforming curves, and (b) the URS I-V curves after electroforming process with Icc = −8 mA of Sb/Sb2O5/Pt structure using negative voltage sweep mode. Schematic diagrams of oxygen ion movement and Sb clusters (c) at pristine state and (d) with high positive bias, and (e) with high negative bias.
(a) The magnitude of current and (b) the current density in LRS of Sb/Sb2O5/Pt structure for various device areas. The current values were read at V= 0.5 V.
(a)–(c) The bright field TEM images of the Pt/Sb2O5/Pt structure after set process, (d)–(f) show the inversed FFT images of (a)–(c), respectively, using the diffraction spots indicated in (g)–(i). (g)–(i) The FFT micrographs of crystalline region in Sb2O5.
Physical properties of various BMO materials for ReRAM application.
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