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Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5
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10.1063/1.4766415
/content/aip/journal/jap/112/10/10.1063/1.4766415
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/10/10.1063/1.4766415

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the Gibbs free energy of formation per one O2 mole of various transition metal oxides.35

Image of FIG. 2.
FIG. 2.

(a) Glancing angle X-ray diffraction patterns of Sb2O5 films on Pt/Ti/SiO2/Si substrate, and (b) cross-section TEM image of Pt/Sb2O5/Pt structure.

Image of FIG. 3.
FIG. 3.

(a) XPS Sb 3 d (left panel) and Pt 4f (right panel) depth profiling spectra for Pt/Sb2O5/Pt structure. (b) The XPS Sb 3 d (left panel) and Pt 4f (right panel) depth profiling spectra of Sb/Sb2O5/Pt structure.

Image of FIG. 4.
FIG. 4.

AES depth profiles results of (a) Pt/Sb2O5/Pt and (b) Sb/Sb2O5/Pt structures.

Image of FIG. 5.
FIG. 5.

(a) The URS I-V results and (b) electrical endurance characteristics of Pt/Sb2O5/Pt structure.

Image of FIG. 6.
FIG. 6.

(a) The URS I-V characteristics of the Sb/Sb2O5/Pt structure. Inset figure shows the I-V result of SSP and PSP structures during electroforming process. (b) The electrical endurance characteristics of SSP structure.

Image of FIG. 7.
FIG. 7.

(a) The electroforming curves, and (b) the URS I-V curves after electroforming process with Icc = −8 mA of Sb/Sb2O5/Pt structure using negative voltage sweep mode. Schematic diagrams of oxygen ion movement and Sb clusters (c) at pristine state and (d) with high positive bias, and (e) with high negative bias.

Image of FIG. 8.
FIG. 8.

(a) The magnitude of current and (b) the current density in LRS of Sb/Sb2O5/Pt structure for various device areas. The current values were read at V= 0.5 V.

Image of FIG. 9.
FIG. 9.

(a)–(c) The bright field TEM images of the Pt/Sb2O5/Pt structure after set process, (d)–(f) show the inversed FFT images of (a)–(c), respectively, using the diffraction spots indicated in (g)–(i). (g)–(i) The FFT micrographs of crystalline region in Sb2O5.

Tables

Generic image for table
Table I.

Physical properties of various BMO materials for ReRAM application.

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/content/aip/journal/jap/112/10/10.1063/1.4766415
2012-11-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/10/10.1063/1.4766415
10.1063/1.4766415
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