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Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering
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10.1063/1.4766904
/content/aip/journal/jap/112/11/10.1063/1.4766904
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4766904

Figures

Image of FIG. 1.
FIG. 1.

(a) Typical X-Ray diffraction patterns of TaxSiyNz thin films; (BB-XRD) diffractograms of over-stoichiometric TaxSiyN0.56 films, (b) crystalline grain sizes calculated using the Scherrer equation for the three series, and (c) Si coverage estimated using the model described in Ref. 18.

Image of FIG. 2.
FIG. 2.

(a) Real ε 1 and (b) imaginary ε 2 parts of the dielectric function of TaxSiyN0.44 thin films for selected Si content (in at. %) and fitted (solid lines) curves using the Drude-Lorentz model.

Image of FIG. 3.
FIG. 3.

(a) Real ε 1 and (b) imaginary ε 2 parts of the dielectric function of TaxSiyN0.5 thin films for selected Si content (in at. %) and fitted (solid lines) curves using the Drude-Lorentz model.

Image of FIG. 4.
FIG. 4.

(a) Real ε 1 and (b) imaginary ε 2 parts of the dielectric function of TaxSiyN0.56 thin films for selected Si content and fitted (solid lines) curves using the Drude-Lorentz model.

Image of FIG. 5.
FIG. 5.

Typical experimental and numerically calculated (solid lines) reflective spectra of: (a) near-stoichiometric TaxSiyN0.5 and (b) over-stoichiometric TaxSiyN0.56 thin films.

Image of FIG. 6.
FIG. 6.

(a) Charge carrier density and b) scattering time obtained by fitting the data using the Drude-Lorentz model for substoichiometric, near- and over-stoichiometric films.

Image of FIG. 7.
FIG. 7.

Temperature-dependent d.c. electrical resistivity ρ(T) curves for selected Si concentrations (in at. %) of: (a) sub-stoichiometric TaxSiyNo.44 (open symbols) and near-stoichiometric TaxSiyN0.5 thin films (close symbols), b) over-stoichiometric TaxSiyN0.56 films. The solid lines are the best fitting with the grain-boundary model.

Image of FIG. 8.
FIG. 8.

(a) Grain boundary transmission probability G and (b) K values used for the best fitting using the GBS model.

Tables

Generic image for table
Table I.

Typical parameters obtained for the best fit of the electrical resistivity of TaxSiyNz films using the grain-boundary scattering model as a function of at. % of Si (C Si).

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/content/aip/journal/jap/112/11/10.1063/1.4766904
2012-12-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4766904
10.1063/1.4766904
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