1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane
Rent:
Rent this article for
USD
10.1063/1.4767328
/content/aip/journal/jap/112/11/10.1063/1.4767328
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4767328

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the CVD reactor geometry used for modelling purposes.

Image of FIG. 2.
FIG. 2.

Schematic illustration of a clasical boundary layer and reactor conditions over the susceptor.

Image of FIG. 3.
FIG. 3.

Normalized concentrations calculated as a function of the axial position x in units of , which is indicated along each curve. Solid line: concentration as a function of position above the susceptor in an isothermal cell with a capturing boundary at y = 0, for a constant gas velocity and temperature. Dashed line: concentration profile for and after correction for the linear velocity profile. Parameter of the figure is the axial position, x in .

Image of FIG. 4.
FIG. 4.

Normalized concentration found from Eq. (7) versus axial position, x in . The entrance length, x 0, where the C(x,y) = 0.99C 0, is also indicated.

Image of FIG. 5.
FIG. 5.

Parabolic flow profile for (solid line) and linear velocity approximation (dashed line) as a function of y for 0 ≤ y ≤ h/4.

Image of FIG. 6.
FIG. 6.

Heterogeneous reaction possibilities involved in PureB-layer CVD with B2H6 as a precursor.

Image of FIG. 7.
FIG. 7.

The temperature distribution for an ASM Epsilon One CVD reactor as simulated by commercial fluent software with the total pressure at ATM. To simplify the simulation, hydrogen is considered to be the main gas flowing over the susceptor. The susceptor is heated up by an assembly of lamps to the deposition temperature (here 700 °C) and this heat is transferred to the flowing gas.

Image of FIG. 8.
FIG. 8.

Model and experimental results for the PureB deposition rate as a function of (a) an axial position, x, (b) main gas flow over the susceptor, and (c) diborane partial pressure. The applied diborane partial pressures were 3.39, 2.55, and 1.7 mtorr given by P1, P2, and P3, respectively. And the applied gas flows were 20, 15, and 10 slm given by F1, F2, and F3, respectively. All experiments were performed at atmospheric pressure.

Image of FIG. 9.
FIG. 9.

2D contour plots of the normalized PureB deposition rate over a non-rotating wafer for (a) P 1 F 1, (b) P 1 F 3, and (c) P 3 F 1 conditions. Here, P 1 and P 3 are 3.39 and 1.7 mtorr, F 1 and F 3 are 20 and 10 slm, respectively.

Image of FIG. 10.
FIG. 10.

Lateral distribution of gas velocity at a specific height above the susceptor for the h/b ratios 0.085, 0.1, 0.25, 0.5, and 1, according to Ref. 37.

Tables

Generic image for table
Table I.

Heterogeneous reaction possibilities involved in PureB-layer CVD with B2H6 as a precursor.

Generic image for table
Table II.

The main parameters describing the experimental conditions for both the Epsilon One and Epsilon 2000.

Loading

Article metrics loading...

/content/aip/journal/jap/112/11/10.1063/1.4767328
2012-12-03
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4767328
10.1063/1.4767328
SEARCH_EXPAND_ITEM