Schematic of an axial double heterostructure nanowire.
Stress field distributions with different height of medium layer: (a) in the plane, nm, nm; (b) along the wire axis; (c) in the plane, nm, nm; and (d) along the wire axis.
The relationship between height of mediumlayer h and radius when mediumlayer just recover to the stress-free state.
(a) Dependence of the total energy with different dislocation position on indium contents. , total energy with dislocation at under-medium interface. , total energy with dislocation at medium-over interface; and (b) Dependence of total energy difference with different dislocation position, , on indium contents. For both (a) and (b), the nanowires radius is 30 nm. The insets show the magnified images of selected regions.
Dependence of total energy difference with different dislocation position on nanowire radius. The indium content is 29%.
(a) Dependence of the critical thickness on the nanowire radius for different lattice mismatch. Symbols give the radius of heterostructured nanowires grown with (open symbol) or without (full symbols) dislocations for lattice mismatch f = 1.6%(diamond 17 ), 3.5%(circle 8,18 ), 0.7%(square 6 ); and (b) Dependence of the two critical radiuses on the lattice mismatch. The area between two lines in (a) is the dislocation-controllable region, the left and right lines are the dislocation-free critical radius and dislocation-unavoidable critical radius, respectively.
Comparison between the dislocation-free critical radius for single heterostructures 11 (denoted as a green dotted line) and double heterostructure with different mediumlayer thickness.
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