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Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities
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10.1063/1.4768707
/content/aip/journal/jap/112/11/10.1063/1.4768707
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4768707
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Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the sample structure (left) and energy band structure (right) of (a) Ga/Al-polar and (b) N-polar GaN/AlN heterojunctions. The inserts illustrate the voltage drop across the heterojunctions.

Image of FIG. 2.
FIG. 2.

Spontaneous polarizations of III-Nitrides and II-Oxides consist of x metal-polarity and (1-x) N/O-polarity. of bulk MgO is taken from Ref. 24, while others are taken from Ref. 12

Image of FIG. 3.
FIG. 3.

Calculated polarization-induced interface charge densities of several heterojunctions consist of x metal-polarity and (1-x) N/O-polarity.

Image of FIG. 4.
FIG. 4.

Calculated VBOs of InN/AlN and GaN/AlN heterojunctions consist of x metal-polarity and (1-x) N-polarity. △ Ref. 20; * Ref. 8; ▽ Ref. 9; + Ref. 10; ○ Ref. 8; □ Ref. 11.

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/content/aip/journal/jap/112/11/10.1063/1.4768707
2012-12-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4768707
10.1063/1.4768707
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