Switching results for a Ag/PCMO interface with 200 V pulses at different temperatures. The polarity of the applied switching pulse is indicated above the horizontal axis. The switching magnitude is enhanced at 250 K, but no switch is observable at 150 K. The inset shows the sample and circuit configuration, with the shaded black area representing the interface region under study.
Resistance as a function of temperature for a switch set in the high and low states, and for the bulk film underneath the interface. The increase in the high state interface resistance near 250 K is likely related to the ΔR enhancement observed in the switching characteristics.
Current-voltage characteristics taken from a single sample at various temperatures for (a) the high resistance and (c) low resistance states. Power law fits of the room temperature I-V curves (high resistance state (b) and low resistance state (d)) are consistent with the presence of space charge limited conduction.
ΔR′ for several Ag/PCMO switches vs. temperature. Each plot represents a different sample. Using a 200 V applied pulse, switching is limited to 200 K. The enhancement of ΔR near 250 K vanishes when plotted in this normalized scheme.
ΔR′ plots for a single Ag/PCMO interfacial switch vs. temperature, but taken with different applied voltage amplitudes. Varying the applied voltage generates multiple switch levels, and the lower temperature limit forthe phenomenon is only marginally extended by increasing the pulse amplitude.
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