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Simulation of the formation of a runaway electron beam in an overvolted gas gap breakdown
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10.1063/1.4768912
/content/aip/journal/jap/112/11/10.1063/1.4768912
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4768912
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Geometry of the computational domain: anode radius RA  = 3 cm; cathode radius RC  = 0.3 cm; diode gap D = 1 cm; length of the transmission line with the diode L; Port TM—open boundary for voltage supply. Shown also in the figure is the spatial electron distribution in the gas discharge gap at the final breakdown stage obtained in numerical simulation.

Image of FIG. 2.
FIG. 2.

Electric field distribution in the diode at different points in time (a)–(c): solid line—in the gas-filled diode; dashed line—in the cold diode; doted line—RAEB front.

Image of FIG. 3.
FIG. 3.

Calculated pulse shape of the diode voltage in the idle mode (dashed line), voltage in the developing breakdown (solid line 1), and RAEB current to the anode (solid line 2).

Image of FIG. 4.
FIG. 4.

Characteristic spectrum of electrons arrived at the anode by the point in time 380 ps.

Image of FIG. 5.
FIG. 5.

Phase portrait of electrons and electric field distribution in the diode by the point in time 320 ps (47 ps after the onset of emission): solid line—field in the gas-filled diode; dashed line—field in the cold diode; the RAEB is marked by gray area.

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/content/aip/journal/jap/112/11/10.1063/1.4768912
2012-12-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simulation of the formation of a runaway electron beam in an overvolted gas gap breakdown
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4768912
10.1063/1.4768912
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