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Effect of H and OH desorption and diffusion on electronic structure in amorphous In-Ga-Zn-O metal-oxide-semiconductor diodes with various gate insulators
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10.1063/1.4769803
/content/aip/journal/jap/112/11/10.1063/1.4769803
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4769803

Figures

Image of FIG. 1.
FIG. 1.

The structures of the (a) MOS diodes and (b) TFTs used in this study.

Image of FIG. 2.
FIG. 2.

C–V characteristics of the a-IGZO MOS diodes with the (a) thermal SiO2 G/Is before annealing (CV-1) and after annealing (CV-2) and (b) CVD G/Is after annealing (CV-3).

Image of FIG. 3.
FIG. 3.

(a) 1/C 2V characteristics of CV-1, CV-2, and CV-3, and (b) the depth profile of the space-charge density of the films.

Image of FIG. 4.
FIG. 4.

Bias voltage dependences of the ICTS spectra for (a) CV-1, (b) CV-2, and (c) CV-3 at 210 K.

Image of FIG. 5.
FIG. 5.

Temperature dependences of the ICTS spectra for (a) CV-1, (b) CV-2, and (c) CV-3.

Image of FIG. 6.
FIG. 6.

Arrhenius plots according to Eq. (3) determined from the peak position of the ICTS spectra.

Image of FIG. 7.
FIG. 7.

Depth profile of H and OH for CV-1, CV-2, and CV-3 detected by secondary ion mass spectroscopy.

Image of FIG. 8.
FIG. 8.

TFT characteristics from the TFTs using the (a) thermal SiO2 (CV-2) and (b) CVD G/I (CV-3).

Image of FIG. 9.
FIG. 9.

TFT characteristics using the single-layer SiO2 CVD G/I (the hydrogen content in the film was 1.2%).

Tables

Generic image for table
Table I.

Description of samples used in this study.

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/content/aip/journal/jap/112/11/10.1063/1.4769803
2012-12-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of H and OH desorption and diffusion on electronic structure in amorphous In-Ga-Zn-O metal-oxide-semiconductor diodes with various gate insulators
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/11/10.1063/1.4769803
10.1063/1.4769803
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