The structures of the (a) MOS diodes and (b) TFTs used in this study.
C–V characteristics of the a-IGZO MOS diodes with the (a) thermal SiO2 G/Is before annealing (CV-1) and after annealing (CV-2) and (b) CVD G/Is after annealing (CV-3).
(a) 1/C 2–V characteristics of CV-1, CV-2, and CV-3, and (b) the depth profile of the space-charge density of the films.
Bias voltage dependences of the ICTS spectra for (a) CV-1, (b) CV-2, and (c) CV-3 at 210 K.
Temperature dependences of the ICTS spectra for (a) CV-1, (b) CV-2, and (c) CV-3.
Arrhenius plots according to Eq. (3) determined from the peak position of the ICTS spectra.
Depth profile of H and OH for CV-1, CV-2, and CV-3 detected by secondary ion mass spectroscopy.
TFT characteristics from the TFTs using the (a) thermal SiO2 (CV-2) and (b) CVD G/I (CV-3).
TFT characteristics using the single-layer SiO2 CVD G/I (the hydrogen content in the film was 1.2%).
Description of samples used in this study.
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