(a) M1 and rutile lattice structure of . (b) Band structure of for M1 and rutile. (c) Schematic of the spherical band model for the two phases.
(a) XRD diffractogram of the films. (b) TEM cross section of the -Ti interface. A box highlights the interface. (c) Cross section of MOS capacitor. (d) Cross section of reference -metal MOS capacitor. (e) Cross section of the -insulator-metal capacitor. (f) TEM cross section of -Pt capacitor.
(a) Capacitance-voltage data of and aluminum electrode Si MOS capacitors. (b) WF vs. flat band voltage shift plot of the investigated electrodes. (c) Extracted at and as a function of electrode metal WF. (d) and (e) T-dependence below .
(a) data vs. T and the model fit for three different scenarios. (b) T-sweep of (c) Arrhenius plot of .
XPS of the surface. and peak positions shown by 4+ and 5+ resp. (a) to normal incidence XPS for samples without surface treatment, with HF and DI water treatment immediately prior to XPS. (b) to normal incidence XPS. (c) Deconvolution of peaks for shallow and for (d) near normal incidence. (e) Plot of peaks of , and from (e) Ref. 21 [Reprinted with permission from Mendialdua et al., Journal of Electron Spectroscopy and Related Phenomena 71, 249 (1995). Copyright 1995 Elsevier Science] and (f) Ref. 22 [Reprinted with permission from Beke et al., Thin Solid Films 519, 1761 (2010). Copyright 2010 Elsevier Science]. (g) ARXPS depth profile extraction plot with density ratio K and the 4+/5+ peak area ratio R.
(a) The CNL and (b) pinning factor for different doping and effective masses derived from WKB model fits to vs. WF and T (c) WKB modeled interface electrical characteristics for an interlayer thickness of .
Gate current as a function of temperature at a gate voltage of 0.05 V for a -Pt capacitor with diameter showing a transition at the MIT temperature.
Angle integrated XPS spectra of and stacks.
Detailed gate current characteristics of -insulator-Pt capacitors. (a) temperature dependence for 2 nm ( diameter), (b) voltage dependence for 2 nm , (c) and (d) are for 4 nm ( diameter), and (e) and (f) 2 nm ( diameter).
Electrode effective work function and interlayer conduction band edge dependence of interfacial resistivity of metal– interlayer— tunnel junctions for different carrier concentrations. Structures without barriers are also included. Off and On criteria are indicated on the right hand side, and the bell bars show compliant Off and On resistance couples.
Article metrics loading...
Full text loading...