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Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy
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10.1063/1.4767925
/content/aip/journal/jap/112/12/10.1063/1.4767925
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4767925
/content/aip/journal/jap/112/12/10.1063/1.4767925
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/content/aip/journal/jap/112/12/10.1063/1.4767925
2012-12-18
2014-11-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4767925
10.1063/1.4767925
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