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Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory
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10.1063/1.4769218
/content/aip/journal/jap/112/12/10.1063/1.4769218
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4769218
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The electroforming process in 15-Sccm sample. Right top and right bottom insets show a plot of ln(I/V) vs V1/2 and a plot of current vs temperature in LRS. Arrows indicate voltage sweep directions. (b) The device yield and relative dielectric constant as function of oxygen flow rate in SiOx deposited process.

Image of FIG. 2.
FIG. 2.

Thirty cycles of unipolar switching behaviors of (a) 5-Sccm samples and (b) 10-Sccm samples with compliance current 1 mA. Top and bottom insets show a plot of ln(I/V) vs V1/2 and a plot of current vs temperature in HRS. The distribution of oxygen-flow dependence (c) Vset/Vreset and (d) HRS/LRS.

Image of FIG. 3.
FIG. 3.

(a) The electroforming process, average of switching powers, and HRS and LRS as a function of device size. (b) The forming voltage, statistics of switching powers, and HRS and LRS as a function of SiOx thickness.

Image of FIG. 4.
FIG. 4.

Continuous unipolar switching behaviors of the 10-Sccm samples (a) under a series of compliance current in set process at fixed stopped voltage condition and (b) under a series of stopped voltage in reset process at fixed compliance current condition.

Image of FIG. 5.
FIG. 5.

(a) Statistics plots of reset current and voltage (inset) as a function of compliance current. (b) Statistics plots of reset power as a function of compliance current. The inset shows the average reset current under a series of compliance current.

Image of FIG. 6.
FIG. 6.

(a) Statistics plots of set current (inset) and voltage as a function of stopped voltage. (b) Statistics plots of set power as a function of stopped voltage. The inset shows the relation between Rset and 1/Iset 2 under a series of stopped voltage.

Image of FIG. 7.
FIG. 7.

Schematic pictures of (a) showing the filament near the sidewall in a cross-section view and (b) a front-view of the filaments showing how it might spread-out across the sidewall surface. The band diagrams of sidewall-devices (c) OFF and (d) ON states. The red circle represents defect causing turn-off when injected with an electron; black cross is the defect responsible for conductance of LRS; red line and black circle is product of the above two defects after e injection (energy levels where e are trapped).

Image of FIG. 8.
FIG. 8.

The simulated fitting curve from HRS and LRS in resistive switching behaviors.

Image of FIG. 9.
FIG. 9.

The simulated curve in (a) compliance current effect and (b) stopped voltage effect.

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/content/aip/journal/jap/112/12/10.1063/1.4769218
2012-12-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4769218
10.1063/1.4769218
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