Cross-sectional SEM image of a silicon substrate after being subjected to BEN-BEG of UNCD for 1 h.
Plan-view SEM image of a silicon substrate after being subjected to BEN-BEG of UNCD for 1 h.
(a) Visible-Raman and (b) UV-Raman spectra of UNCD nano-pillars deposited by BEN-BEG.
Cross-sectional TEM micrographs of a diamond film of (a) low-magnification and (b) high-magnification.
HR-TEM images of diamond-Si interface with FFT diffractograms corresponding to regions I and II in Fig. 4(b).
HR-TEM micrographs of an UNCD film with its associated SAED pattern.
Bias voltage as function of BEN-BEG time with fixed DC current of 320 mA being applied between the substrate and the counter electrode.
Electron field emission characteristics and the corresponding F-N plot for a BEN-BEG UNCD film with nano-pillars.
Optical reflectivity of UNCD nano-pillars grown on a silicon substrate.
Article metrics loading...
Full text loading...