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Ultrananocrystalline diamond nano-pillars synthesized by microwave plasma bias-enhanced nucleation and bias-enhanced growth in hydrogen-diluted methane
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10.1063/1.4769861
/content/aip/journal/jap/112/12/10.1063/1.4769861
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4769861
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM image of a silicon substrate after being subjected to BEN-BEG of UNCD for 1 h.

Image of FIG. 2.
FIG. 2.

Plan-view SEM image of a silicon substrate after being subjected to BEN-BEG of UNCD for 1 h.

Image of FIG. 3.
FIG. 3.

(a) Visible-Raman and (b) UV-Raman spectra of UNCD nano-pillars deposited by BEN-BEG.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM micrographs of a diamond film of (a) low-magnification and (b) high-magnification.

Image of FIG. 5.
FIG. 5.

HR-TEM images of diamond-Si interface with FFT diffractograms corresponding to regions I and II in Fig. 4(b).

Image of FIG. 6.
FIG. 6.

HR-TEM micrographs of an UNCD film with its associated SAED pattern.

Image of FIG. 7.
FIG. 7.

Bias voltage as function of BEN-BEG time with fixed DC current of 320 mA being applied between the substrate and the counter electrode.

Image of FIG. 8.
FIG. 8.

Electron field emission characteristics and the corresponding F-N plot for a BEN-BEG UNCD film with nano-pillars.

Image of FIG. 9.
FIG. 9.

Optical reflectivity of UNCD nano-pillars grown on a silicon substrate.

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/content/aip/journal/jap/112/12/10.1063/1.4769861
2012-12-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrananocrystalline diamond nano-pillars synthesized by microwave plasma bias-enhanced nucleation and bias-enhanced growth in hydrogen-diluted methane
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4769861
10.1063/1.4769861
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