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Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
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10.1063/1.4770324
/content/aip/journal/jap/112/12/10.1063/1.4770324
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4770324
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Figures

Image of FIG. 1.
FIG. 1.

Crystal structure of bulk Bi2Se3 hexagonal unit cell. A quintuple layer (QL), a basic building block of thin film structures, is indicated by the rectangle.

Image of FIG. 2.
FIG. 2.

Band structures of 1 QL, 2 QLs, 3 QLs, and 6 QLs thin films obtained by DFT calculation along high symmetry directions in the hexagonal Brillouin zone (BZ).

Image of FIG. 3.
FIG. 3.

(a) Top view of Bi2Se3 thin film. Three different symbols (○, ◻, and ×) are for atomic positions in different atomic layers stacked along the z-direction. A rectangular unit cell is denoted. (b) Device structure of Bi2Se3 MOSFET. The nominal device parameters are as follows: Bi2Se3 (κ = 100) thin film = 1QL (∼0.7 nm), HfO2 (κ = 25) gate oxide thickness = 2 nm, channel length = 20 and 50 nm, n-type doping density of source and drain = 1 × 1013 cm−2.

Image of FIG. 4.
FIG. 4.

Band structures of a 1QL thin film calculated from the TB Hamiltonian for two different transverse modes (ky  = 0 and π/ay) in the rectangular BZ.

Image of FIG. 5.
FIG. 5.

Characteristics of 50 nm channel length 1QL Bi2Se3 MOSFET: (a) I DS vs. V GS curves at V DS = 0.05 V and V DS = 0.5 V on logarithmic (left axis) and linear scales (right axis), (b) I DS vs. V DS curves at V GS = 0.3, 0.4, and 0.5 V, (c) I ON vs. I ON /I OFF at V DS = 0.5 V and (d) transconductance (g m = ∂I DS/∂V GS) vs. V GS at V DS = 0.5 V.

Image of FIG. 6.
FIG. 6.

CB and VB edges profiles along the 50 nm channel length Bi2Se3 MOSFET for V GS from −0.4 to 0.5 V in steps of 0.1 V (a) at V DS = 0.05 V and (b) V DS = 0.5 V.

Image of FIG. 7.
FIG. 7.

Characteristics of 20 nm channel length 1QL Bi2Se3 MOSFET: (a) I DS vs. V GS curves at V DS = 0.05 V and V DS = 0.5 V on logarithmic (left axis) and linear scales (right axis), (b) I DS vs. V DS curves at V GS = 0.3, 0.4 and 0.5 V, (c) I ON vs. I ON /I OFF at V DS = 0.5 V and (d) transconductance (g m = ∂I DS/∂V GS) vs. V GS at V DS = 0.5 V. All are plotted over the same ranges as for the 50 nm device of Figure 6 for better comparison.

Image of FIG. 8.
FIG. 8.

CB and VB edges profiles along the 20 nm channel length Bi2Se3 MOSFET for V GS from −0.4 to 0.5 V in steps of 0.1 V (a) at V DS = 0.05 V and (b) V DS = 0.5 V.

Image of FIG. 9.
FIG. 9.

Comparison of characteristics of 30 nm channel length SOI MOSFET and 1QL Bi2Se3 MOSFET (a) I DS vs. V GS curves at V DS = 0.05 V and V DS = 0.5 V on logarithmic (left axis) and linear scales (right axis), (b) I ON vs. I ON /I OFF at VDS  = 0.5 V, and (c) transconductance (g m = ∂I DS/∂V GS) vs. V GS at V DS = 0.5 V.

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/content/aip/journal/jap/112/12/10.1063/1.4770324
2012-12-20
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4770324
10.1063/1.4770324
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