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Tunnel conductance in GaN:Mn/AlN/GaN:Mn (0001) junction from first-principles calculations
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10.1063/1.4770369
/content/aip/journal/jap/112/12/10.1063/1.4770369
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4770369
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic top view of the structure of the scattering region. A surface (1 × 2) unit cell is employed. Two different replacing configurations for Mn are shown in (a) and (b), respectively. The interfaces are indicated by vertical dashed lines.

Image of FIG. 2.
FIG. 2.

The electronic structures of GaN:Mn and the complex band structure of AlN along [0001] direction at . The spin-polarized band structures of GaN:Mn are shown in (a) and (b). The calculated total DOS of GaN:Mn and the Mn-3d projected DOS are shown in (c) and (d), respectively. Real bands, complex bands with for AlN are plotted in (e) and (f), respectively, each band is labeled by its main atomic character.

Image of FIG. 3.
FIG. 3.

The calculated majority-spin transmittances at the Fermi level as a function of the in-plane wave vector for the parallel magnetization MTJ. The left and right panels are for CGI and CGII, respectively. The barrier thickness of AlN is 4 layers in (a) and (b), 8 layers in (c) and (d), 12 layers in (e) and (f), respectively.

Image of FIG. 4.
FIG. 4.

The atomic partial DOSs in CGI. That for Mn atom doping in the left and right sides of the scattering region is shown in (a) and (b), respectively. Those for the left and right interface atoms are shown in (c) and (d), respectively. The DOS curves of Mn atom for different barrier thicknesses are shown in the inset.

Image of FIG. 5.
FIG. 5.

The atomic partial DOSs in CGII. That for Mn atom doping in the left and right sides of the scattering region is shown in (a) and (b), respectively. Those for the left and right interface atoms are shown in (c) and (d), respectively. The DOS curves of Mn atom for different barrier thicknesses are shown in the inset.

Image of FIG. 6.
FIG. 6.

The calculated total transmissions as a function of energy for majority-spin and minority-spin with the parallel magnetization MTJ. The left and right panels are for CGI and CGII, respectively. The barrier thickness of AlN is 4 layers in (a) and (b), 8 layers in (c) and (d), 12 layers in (e) and (f), respectively.

Image of FIG. 7.
FIG. 7.

(a) The calculated -dependent majority-spin transmittances at the Fermi level for the parallel magnetization MTJ with 6.25% Mn-doping concentration. A surface (2 × 2) unit cell is employed to simulate this doping concentration. The corresponding spin-up and spin-down bands of GaN:Mn are shown in (b) and (c).

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/content/aip/journal/jap/112/12/10.1063/1.4770369
2012-12-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunnel conductance in GaN:Mn/AlN/GaN:Mn (0001) junction from first-principles calculations
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4770369
10.1063/1.4770369
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