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Miniband electronic structure of quantum dash array
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10.1063/1.4770437
/content/aip/journal/jap/112/12/10.1063/1.4770437
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4770437

Figures

Image of FIG. 1.
FIG. 1.

The cross-section profile of QDH array and the computational domain in (a) the real xy-space, and in (b) the mapped uv-space. Dashed lines represent boundaries of the computational domain and the elementary cell of the QDH array.

Image of FIG. 2.
FIG. 2.

Profile of the QDH cross-section (a) for H = 3 nm, W = 7 nm and various array periods L = 8, 12, 16, and 20 nm. Same for different heights H = 1 – 5 nm for QDH array with W = 7 nm and (b) L = 14 nm or (c)L = 23 nm. Same for different widths (d) W = 4, 6, 8, 10 and 12 nm for QDH array with H = 3 nm and L = 14 nm, and (e) W = 2, 4, 6, 8 and 10 nm for QDH array with H = 3 nm and L = 23 nm. Profiles in (a), (b), and (d) are obtained by fitting with Atanh-mapping, while (c) and (e) correspond to Gauss-mapping.

Image of FIG. 3.
FIG. 3.

The miniband structure for the periodic InAs/InGaAlAs QDH array with with respect to (a)-(b) period L, (c)–(e) QDH height H, and (f)–(h) QDH width W. The miniband structure in (a), (c), and (f) correspond to QDH arrays obtained by fitting with Atanh-mapping, while those in (b), (d), (e), (g), and (h) correspond to the QDH arrays obtained by fitting with Gauss-mapping. Insets show zero-band-gap region between 2nd and 3rd miniband.

Image of FIG. 4.
FIG. 4.

Profile of the wavefunctions for QDH with L = 35 nm, W = 7 nm and H = 3.2 nm (a) at the bottom of the 3rd and (b) at the top of the 2nd miniband. (c) and (d): Same for H = 3.6 nm, respectively.

Image of FIG. 5.
FIG. 5.

The miniband structure for the periodic InAs/GaAs QDH array with with respect to (a)–(b) period L, (c)–(e) QDH height H, and (f)–(h) QDH width W. The miniband structure in (a), (c), and (f) correspond to the QDH arrays obtained by fitting with Atanh-mapping, while those in (b), (d), (e), (g), and (h) correspond to the QDH arrays obtained by fitting with Gauss-mapping.

Image of FIG. 6.
FIG. 6.

Schematics of the ZMBG and anti-crossing effect between the 2nd and 3rd miniband for InAs/GaAs QDH array with L = 35 nm and H = 3 nm with respect to variation of QDH width W. Wavefunction profiles corresponding to W = 2.5, 5 and 7.5 nm are denoted with open and solid square, triangle, and dot markers.

Tables

Generic image for table
Table I.

Material parameters used for band calculation.

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/content/aip/journal/jap/112/12/10.1063/1.4770437
2012-12-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Miniband electronic structure of quantum dash array
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4770437
10.1063/1.4770437
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