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Quantum-dot density dependence of power conversion efficiency of intermediate-band solar cells
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10.1063/1.4771925
/content/aip/journal/jap/112/12/10.1063/1.4771925
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4771925

Figures

Image of FIG. 1.
FIG. 1.

Contour map of calculated PCE of IBSCs as functions of Ecv and Eiv under AM1.5 and 1000 sun. The PCE was calculated for pre-filled states. Total QD density was 5 × 1018 cm−2.

Image of FIG. 2.
FIG. 2.

Calculated PCE for the IBSCs as a function of QD density under various sun concentrations (1–10 000) of AM1.5. For each sun concentration, bandgap (Ecv) and IB (Eiv) were selected to obtain maximum PCE, as shown in Table II. Solid lines and dotted lines were, respectively, obtained for pre-filled state and photo-filled state.

Image of FIG. 3.
FIG. 3.

Calculated PCE of the IBSCs using GaAs/InAs QDs (Ecv = 1.42 eV, Eiv = 1.098 eV) as a function of QD density under various sun concentrations (1–10 000) of AM1.5. Solid lines and dotted lines were obtained for pre-filled state and photo-filled state, respectively.

Image of FIG. 4.
FIG. 4.

Carrier generation retaes (Gci and Giv) and recombination rates (Rci and Riv) between the CB, IB, and VB as a function of InAs QD density. These rates were calculated under photo-filled state and 1 sun (AM1.5) conditions.

Image of FIG. 5.
FIG. 5.

Calculated short-circuit current density (a) and open-circuit voltage (b) of the IBSCs using GaAs/InAs QDs as a function of QD density. Solid lines and dotted lines were obtained for pre-filled state and photo-filled state, respectively, under various sun concentrations (1–1000) of AM1.5.

Tables

Generic image for table
Table I.

Calculation parameters (CB: conduction band, VB: valence band, IB: intermediate band).

Generic image for table
Table II.

Ecv and Eiv values for maximum PCE under various sun concentrations.

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/content/aip/journal/jap/112/12/10.1063/1.4771925
2012-12-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum-dot density dependence of power conversion efficiency of intermediate-band solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/12/10.1063/1.4771925
10.1063/1.4771925
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