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An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes
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10.1063/1.4736591
/content/aip/journal/jap/112/2/10.1063/1.4736591
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/2/10.1063/1.4736591
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Carrier density dependent localized carrier ratio under different parameters. Dark, red, and blue curves show comparison at different nc settings. Dark, orange, and violet curves show comparison at different k settings.

Image of FIG. 2.
FIG. 2.

The schematic diagrams of LC5QW and L5QW.

Image of FIG. 3.
FIG. 3.

Current dependent internal quantum efficiency (η-j) curves of LC5QW and L5QW. The samples are pulse excited at 1% duty cycle to avoid heat influence.

Image of FIG. 4.
FIG. 4.

Fit results of LC5QW and L5QW. (a) Experimental data and fit results of LC5QW. (b) Experimental date and fit results of L5QW. Fit parameters are shown in red color in the figures.

Image of FIG. 5.
FIG. 5.

CL results of samples at 6 K. Intensity (a) and wavelength (b) distributions of LC5QW. Intensity (c) and wavelength (d) distributions of L5QW.

Image of FIG. 6.
FIG. 6.

CL spectra and wavelength histograms of samples LC5QW and L5QW. Histograms are fitted with a Gaussian function. Standard deviation σ is labeled in the figure.

Image of FIG. 7.
FIG. 7.

Fit results of L8QW and L10QW. (a) Experimental data and fit results of L8QW. (b) Experimental data and fit results of L10QW. Fit parameters are shown in red color in the figures.

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/content/aip/journal/jap/112/2/10.1063/1.4736591
2012-07-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/2/10.1063/1.4736591
10.1063/1.4736591
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