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Band offset measurements of the GaN/dielectric interfaces
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10.1063/1.4737583
/content/aip/journal/jap/112/2/10.1063/1.4737583
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/2/10.1063/1.4737583

Figures

Image of FIG. 1.
FIG. 1.

XPS survey spectra of (a) aq-HCl GaN, (b) GaN/Al2O3 after PDA, and (c) GaN/HfO2 after PDA. Some of the core level peaks are identified using a dotted line along with some Auger peaks with dotted circles.

Image of FIG. 2.
FIG. 2.

UPS spectra of the valence band maximum of (a) aq-HCl GaN, (b)GaN/Al2O3 after PDA, and (c) GaN/HfO2 after PDA. (insert) UPS spectra of aq-HCl GaN showing the linear regressions used to determine the valence band maxima and the on-set of the secondary electrons.

Image of FIG. 3.
FIG. 3.

Ga 3d XPS spectra for (a) aq-HCl GaN, (b) GaN/Al2O3 after PDA, and (c) GaN/HfO2 after PDA. Peak fittings are the dotted and dashed lines, there are two or three peaks fitted to each plot.

Image of FIG. 4.
FIG. 4.

Calculated band alignment for the aq-HCl cleaned GaN surface and bulk GaN.

Image of FIG. 5.
FIG. 5.

N 1s XPS spectra for (a) aq-HCl GaN, (b) GaN/Al2O3 after PDA, and (c) GaN/HfO2 after PDA. Peak fittings are the dotted and dashed lines, there are three peaks fitted to each plot.

Image of FIG. 6.
FIG. 6.

Calculated band alignments at the GaN and HfO2 after PDA interface. Important band alignment factors are represented, including the valence band offset (VBO), conduction band offset (CBO), band bending, and interface dipole (Δ).

Image of FIG. 7.
FIG. 7.

Cross-sectional HRTEM image of high-κ HfO2 (9 nm) deposited using ALD on aq-HCl cleaned GaN grown on Si, an interfacial GaON or GaON with Hf layer (2.5 nm) is formed during deposition of HfO2.

Image of FIG. 8.
FIG. 8.

Calculated band alignments at the GaN and Al2O3 after PDA interface. Important band alignment factors are represented, including the valence band offset (VBO), conduction band offset (CBO), band bending, and interface dipole (Δ).

Tables

Generic image for table
Table I.

UPS valence band maximum (VBM) fitting results and XPS core level fitting results for the O 1s, N 1s, Ga 3d, Al 2p, and Hf 4f energy levels. All XPS data has an uncertainty of ± 0.1 eV. All UPS data has an uncertainty of ± 0.1 eV.

Generic image for table
Table II.

Parameters used to calculate the GaN/dielectric interface dipole, where Eg is the band gap of the surface material, EF is the Fermi level of the sample, Ev is the valence band of the surface material, Ec is the conduction band of the surface material, χ is the electron affinity of the surface material, is the difference in the Ga 3d core level of the aq-HCl GaN and the sample, is the difference in the N 1s core level of the aq-HCl GaN and the sample, VBO is the valence band offset, CBO is the conduction band offset, and Δ is the dipole at the GaN/dielectric interface.

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/content/aip/journal/jap/112/2/10.1063/1.4737583
2012-07-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band offset measurements of the GaN/dielectric interfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/2/10.1063/1.4737583
10.1063/1.4737583
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