(a) Sheet resistance, resistivity, (b) mobility, and carrier concentration of TITO films as a function of RTA temperature.
Temperature dependence of resistivity for (a) as-deposited and (b) optimized TITO anodes.
(a) Optical transmittance of TITO and ITO electrodes with the inset showing patterned TITO anode. (b) Work function of the TITO (4.71 eV) and ITO (4.90 eV) electrode obtained from UPS analysis.
XPS core level spectra of (a) In 3d, (b) Ti 2p, (c) Sn 3d, and (d) O 1s obtained from the optimized TITO electrode.
(a) XRD plots and (b) surface AFM images ofthe multicomponent TITO and conventional ITO electrodes.
(a) Cross-sectional TEM image of the TITO electrode and (b) enlarged HRTEM image of the TITO anode with the inset showing fast Fourier transformation pattern. (c) Enlarged HRTEM images obtained from the interface region between the TITO and glass substrate.
(a) Schematic of the fabrication of the phosphorescent OLED on the patterned TITO anode. (b) Energy band diagram of the phosphorescent OLED with the TITO anode.
(a) J-V-L curve of the phosphorescent OLEDs fabricated on TITO and ITO anodes. (b) EQE and PE values obtained from the phosphorescent OLEDs fabricated on the TITO and ITO anodes with the inset showing green emission from the phosphorescent OLEDs.
Comparison of electrical, optical, and surface properties of TITO and ITO electrodes.
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