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Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors
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10.1063/1.4739486
/content/aip/journal/jap/112/3/10.1063/1.4739486
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4739486
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Figures

Image of FIG. 1.
FIG. 1.

The process step to produce expanded graphene: (a) graphite flakes, (b) dipped in sulfuric acid to make viscous graphite flakes, (c) expanded graphene sheets after heating treatment, and (d) SEM images of expanded graphene sheets.

Image of FIG. 2.
FIG. 2.

Digital images of: (a) GO suspension, (b) GO drop-cast on quartz plate, (c) dried GO paper, (d) GO paper in quartz vial before rapid-heating process, (e) GO paper in quartz vial after rapid-heating process for converting GO to BRGO, (f) the resulting BRGO paper, (g) SEM image of BRGO paper surface, and (h) BRGO suspension.

Image of FIG. 3.
FIG. 3.

(a) TGA, (b) XPS, (c) FT-IR, and (d) UV-VIS spectra for GO and BRGO.

Image of FIG. 4.
FIG. 4.

(a) XRD spectra of GO, BRGO, and graphite and (b) Raman spectra of GO and BRGO.

Image of FIG. 5.
FIG. 5.

(a) I-V characteristics of GO and BRGO. (b) The current plotted in natural logarithm scale as a function of T−1/4. The black squares represent the experimental results, and the red line is a fit of the experimental results to the VRH theory. (c) Schematic diagram of a BRGO-channel-based FET with silver electrodes. (d) ID-VG characteristics of the BRGO-channel-based FET (VDS = 2 V).

Image of FIG. 6.
FIG. 6.

(a) Schematic diagram of a graphene-channel-based FET with S and D electrodes made of BRGO. (b) SEM and digital images (inset) of the BRGO film deposited on CVD graphene. (c) I-V characteristics of a CVD graphene device with GO, BRGO, and silver electrodes. (d) ID-VG characteristics of the graphene FET with S and D electrodes made of GO, BRGO, and silver (VDS = 2 V).

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/content/aip/journal/jap/112/3/10.1063/1.4739486
2012-08-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4739486
10.1063/1.4739486
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