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Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors
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10.1063/1.4740221
/content/aip/journal/jap/112/3/10.1063/1.4740221
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4740221

Figures

Image of FIG. 1.
FIG. 1.

Noise voltage measurement setup.

Image of FIG. 2.
FIG. 2.

Average noise voltage PSDs of piezoresistors implanted at 20 keV with total anneal times of 20, 30, and 50 min.

Image of FIG. 3.
FIG. 3.

(a) XTEM (0.2 μm scale) and (b) PTEM (0.5 μm scale) images of a piezoresistor implanted with B at 20 keV and annealed for 30 min.

Image of FIG. 4.
FIG. 4.

Average noise voltage PSDs of piezoresistors implanted at 40 keV with total anneal (inert and oxidizing) times of 30 and 50 min.

Image of FIG. 5.
FIG. 5.

Dependencies of Hooge parameter and TEM defect densities on implantation energy and anneal time.

Image of FIG. 6.
FIG. 6.

Percentage change of defect dimensions between 30 min and 50 min anneals time for 20 keV and 40 keV implants with both inert and oxidizing anneals.

Tables

Generic image for table
Table I.

Piezoresistor implant and anneal conditions.

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/content/aip/journal/jap/112/3/10.1063/1.4740221
2012-08-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4740221
10.1063/1.4740221
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