Noise voltage measurement setup.
Average noise voltage PSDs of piezoresistors implanted at 20 keV with total anneal times of 20, 30, and 50 min.
(a) XTEM (0.2 μm scale) and (b) PTEM (0.5 μm scale) images of a piezoresistor implanted with B at 20 keV and annealed for 30 min.
Average noise voltage PSDs of piezoresistors implanted at 40 keV with total anneal (inert and oxidizing) times of 30 and 50 min.
Dependencies of Hooge parameter and TEM defect densities on implantation energy and anneal time.
Percentage change of defect dimensions between 30 min and 50 min anneals time for 20 keV and 40 keV implants with both inert and oxidizing anneals.
Piezoresistor implant and anneal conditions.
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