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Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series
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10.1063/1.4742015
/content/aip/journal/jap/112/3/10.1063/1.4742015
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4742015

Figures

Image of FIG. 1.
FIG. 1.

HRTEM contrast simulation of GaN with Cs = −12 nm in and projection directions as dependent on the sample thickness and defocus settings. The insets show the crystal structures of GaN in the respective projection.

Image of FIG. 2.
FIG. 2.

First HRTEM image of the series showing the region of the quantum well.

Image of FIG. 3.
FIG. 3.

Sketch of the analysis process.

Image of FIG. 4.
FIG. 4.

(a) Color coded lattice parameter map for a single HRTEM image. (b) Histogram of the measured c-lattice parameters in the GaN layers.

Image of FIG. 5.
FIG. 5.

Decrease of the STD in the GaN layer with increasing number of averaged images. Black squares are data obtained from the evaluation of the experimental series; red dots correspond to image simulations taking amorphous surface layers into account.

Image of FIG. 6.
FIG. 6.

Simulated TEM images of GaN accounting for the modulation transfer function and the resolution of the CCD. The simulations were done for a sample thickness of 8 nm, a spherical aberration of −12 μm, and a Scherzer defocus of +6 nm. (a) Plain simulation without noise. (b) Simulated TEM image with a superimposed noise recorded in a region showing vacuum. (c) Simulated TEM image with a superimposed noise due to an amorphous layer. (d) A section of the experimental image.

Image of FIG. 7.
FIG. 7.

Power spectra from different sections of the experimental HRTEM image showing vacuum, amorphous area, and GaN.

Image of FIG. 8.
FIG. 8.

Color coded lattice parameter map for the averaged HRTEM image series showing (a) the c-lattice parameters and (b) the a-lattice parameter.

Image of FIG. 9.
FIG. 9.

(a) Mean and standard deviation of the c-lattice parameter averaged along the 〈1120〉 direction. (b) Mean and STD of the a-lattice parameter averaged along the 〈1120〉 direction for the averaged HRTEM image series.

Image of FIG. 10.
FIG. 10.

Histograms of the measured c-lattice in (a) the GaN layer, (b) the In0.09Ga0.91N layers, and (c) the In0.16Ga0.83N of the QW structure for the averaged HRTEM image series. The data were taken from the areas indicated by the white frames in Fig. 9.

Image of FIG. 11.
FIG. 11.

Difference between the local c-lattice parameters of the first and the last image of the series. The deviation of the c-lattice parameter is equally noisy over the whole image indicating no measurable beam damage during series acquisition.

Tables

Generic image for table
Table I.

Lattice and elastic constants of GaN and InN used for the calculations.

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/content/aip/journal/jap/112/3/10.1063/1.4742015
2012-08-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4742015
10.1063/1.4742015
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