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Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping
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10.1063/1.4742016
/content/aip/journal/jap/112/3/10.1063/1.4742016
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4742016

Figures

Image of FIG. 1.
FIG. 1.

Band structure for 3C-SiC, EF is located at 0 eV. Here, VT and CB are top of the valence band and bottom of the conduction band, respectively.

Image of FIG. 2.
FIG. 2.

Band structures for (a) Si n 1PC n , and (b) Si n NC n 1. Here, n = 4, 8, 12, 15, 24. EF is located at 0 eV.

Image of FIG. 3.
FIG. 3.

Absorption spectra of (a) SiC, Si n 1PC n and (b) Si n NC n 1, here n = 4, 8, 12, 15, 24. Scissors operator value is 0.98 eV.

Image of FIG. 4.
FIG. 4.

Refractive index spectra of (a) SiC, Si n 1PC n and (b) Si n NC n 1, here n = 4, 8, 12, 15, 24. Scissors operator value is 0.98 eV.

Image of FIG. 5.
FIG. 5.

Wavelength dependence of generation rate of photon-generated carriers at different doping concentrations: (a) 3C-SiC and P-doped SiC, and (b) N-doped SiC.

Image of FIG. 6.
FIG. 6.

PLE spectra from P- and N-doped SiC for various doping concentrations at 300 K: (a) 3C-SiC and P-doped SiC, and (b) N-doped SiC. The insets for (a) and (b) are the PEL spectra for Si23PC24 and 3C-SiC, respectively. The wavelength and intensity of each peak are listed in Table II.

Image of FIG. 7.
FIG. 7.

PL spectra from (a) P- and (b) N-doped 3C-SiC for various doping concentrations at 300 K. The insets for (a) and (b) are the PL spectra of 3C-SiC and Si24NC23, respectively. The wavelength and intensity of each peak are listed in Table II.

Tables

Generic image for table
Table I.

Absorption and energy band structure for 3C-SiC, Si n 1PC n and Si n NC n 1.

Generic image for table
Table II.

PLE and PL peak wavelengths, λ ex and λ em, respectively, for 3C-SiC, Si n 1PC n and Si n NC n 1.

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/content/aip/journal/jap/112/3/10.1063/1.4742016
2012-08-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4742016
10.1063/1.4742016
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