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Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping
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10.1063/1.4742016
/content/aip/journal/jap/112/3/10.1063/1.4742016
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4742016
/content/aip/journal/jap/112/3/10.1063/1.4742016
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/content/aip/journal/jap/112/3/10.1063/1.4742016
2012-08-03
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4742016
10.1063/1.4742016
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