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1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding
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10.1063/1.4742198
/content/aip/journal/jap/112/3/10.1063/1.4742198
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4742198
/content/aip/journal/jap/112/3/10.1063/1.4742198
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/content/aip/journal/jap/112/3/10.1063/1.4742198
2012-08-07
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4742198
10.1063/1.4742198
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