Energy level diagram for InAs/In0.53Ga0.23Al0.24As QDashes (left panel) and In0.53Ga0.47As/In0.53Ga0.23Al0.24As QW (right panel). Note that the potential profile plotted for the QDash should be treated as an illustration only.
Temperature-dependent PL spectra for the InAs/In0.53Ga0.23Al0.24As QDashes (a), In0.53Ga0.47As/In0.53Ga0.23Al0.24As QW (b), and a TI structure with 3 nm barrier (c).
Temperature dependence of the emission peak energy for the reference QW and QDashes. The inset shows the difference between the QW and the QDash ground state transition energy as a function of temperature.
Temperature dependence of QDash and QW integrated emission intensities for the reference samples (a) and the TI structures with 4 nm (b),3 nm (c), and 2 nm barriers (d).
Temperature dependence of the QDash emission linewidth for the reference and tunnel-injection structures with the different barrier thickness values. Lines are added as a guide to the eye.
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