The exciton binding energy versus the QWR width for different screen lengths. The symbols ▪ and □ show the calculated binding energies for a pure exciton system in Refs. 1 and 22, respectively.
The exciton binding energies as a function of the screen length for different values of QWR widths.
The exciton binding energies as a function of carrier density for different values of QWR widths.
(a) The exciton binding energies as functions of QWR widths for carrier densities and . (b) The relative decrease of the exciton binding energy versus the QWR width.
Contour plot depicting the exciton binding energy phase diagram of a QWR with on the n – T plane for a range of conditions ranging form a coexistence of excitons and free carriers to an e – h plasma state. Each contour line represents a value for the binding energy (in units of meV) of the exciton in QWR.
The critical carrier density as a function of QWR width. Here, corresponds to the critical carrier density above which no excitons can be formed.
The average distance between the electron and hole as a function of the screen parameter 1/S for different QWRs widths. Zero points of exciton binding energies are located by the symbol • in the corresponding curves.
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