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Energy level pinning of an n-type semiconducting polymer on conductive polymer electrodes: Effects of work function and annealing
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10.1063/1.4745017
/content/aip/journal/jap/112/3/10.1063/1.4745017
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745017
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Chemical structure of PEDT:PSS and P(NDI2OD-2T).

Image of FIG. 2.
FIG. 2.

Measured absorbance for spin coated P(NDI2OD-2T) films on fused silica (black dots) and on PEDT:PSS (red squares) for different film thickness. The film thickness was determined by AFM.

Image of FIG. 3.
FIG. 3.

S2p core levels of the pristine PEDT:PSS substrate and for three P(NDI2OD-2T) films on top. The shaded dark grey area is the contribution of P(NDI2OD-2T) to the S2p signal.

Image of FIG. 4.
FIG. 4.

UPS spectra of P(NDI2OD-2T) films with varying thickness (Θ) on PEDT:PSS before (black lines) and after in situ annealing at 120 °C for 30 min (gray lines): SECO (left side) and valence region (right side).

Image of FIG. 5.
FIG. 5.

SECO and valance region of a HIL 1.3 electrode before and after deposition of a 6 nm P(NDI2OD-2T) film on top.

Image of FIG. 6.
FIG. 6.

Energy level alignment at the (a) HIL1.3/P(NDI2OD-2T), (b) the Ca/CaOX/P(NDI2OD-2T), and at the PEDT:PSS/P(NDI2OD-2T) interface of (c) as-prepared and (d) and in situ annealed films.

Image of FIG. 7.
FIG. 7.

SECO and valance region of a Ca film as prepared, after transfer into the glove box, and after deposition of a 3 nm P(NDI2OD-2T) film on top.

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/content/aip/journal/jap/112/3/10.1063/1.4745017
2012-08-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy level pinning of an n-type semiconducting polymer on conductive polymer electrodes: Effects of work function and annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745017
10.1063/1.4745017
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