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Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique
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10.1063/1.4745041
/content/aip/journal/jap/112/3/10.1063/1.4745041
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745041
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Configuration of the nonvolatile memory TFTs and (b) TEM image of the QDs. The average diameter of QDs was about 5.4 nm.

Image of FIG. 2.
FIG. 2.

AFM surface morphology of QD-PMMA composite layer formed (a) with and (b) without a two-step spin coating method. And pentacene film on QD-PMMA composite layer formed (c) with and (d) without a two-step spin coating method.

Image of FIG. 3.
FIG. 3.

X-ray diffraction spectra of the pentacene film in devices A and B.

Image of FIG. 4.
FIG. 4.

Output characteristics of the TFTs with QD-PMMA composite layer formed (a) with and (b) without a two-step spin coating method.

Image of FIG. 5.
FIG. 5.

Transfer characteristics of device A as VGS were swept from +Vmax to −Vmax and turned back then. The amplitude of Vmax was varied from 50 to −150 V, while VDS was constantly −40 V.

Image of FIG. 6.
FIG. 6.

Energy-band diagrams of n+-Si/SiO2/QD-PMMA bland/pentacene (a) with zero, (b) highly positive VGS , and (c) highly negative VGS bias, respectively.

Image of FIG. 7.
FIG. 7.

Threshold voltages of device A as a function of (a) the pulsed gate voltage and (b) the gate pulse time.

Image of FIG. 8.
FIG. 8.

Storage (write-read-erase-read) cycles and retention characteristics of the device A. The bias condition of the programming, erasing, and reading was VGS  = +150, −150, and −5 V.

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/content/aip/journal/jap/112/3/10.1063/1.4745041
2012-08-15
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745041
10.1063/1.4745041
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