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Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique
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10.1063/1.4745041
/content/aip/journal/jap/112/3/10.1063/1.4745041
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745041
/content/aip/journal/jap/112/3/10.1063/1.4745041
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/content/aip/journal/jap/112/3/10.1063/1.4745041
2012-08-15
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745041
10.1063/1.4745041
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