(a) Configuration of the nonvolatile memory TFTs and (b) TEM image of the QDs. The average diameter of QDs was about 5.4 nm.
AFM surface morphology of QD-PMMA composite layer formed (a) with and (b) without a two-step spin coating method. And pentacene film on QD-PMMA composite layer formed (c) with and (d) without a two-step spin coating method.
X-ray diffraction spectra of the pentacene film in devices A and B.
Output characteristics of the TFTs with QD-PMMA composite layer formed (a) with and (b) without a two-step spin coating method.
Transfer characteristics of device A as VGS were swept from +Vmax to −Vmax and turned back then. The amplitude of Vmax was varied from 50 to −150 V, while VDS was constantly −40 V.
Energy-band diagrams of n+-Si/SiO2/QD-PMMA bland/pentacene (a) with zero, (b) highly positive VGS , and (c) highly negative VGS bias, respectively.
Threshold voltages of device A as a function of (a) the pulsed gate voltage and (b) the gate pulse time.
Storage (write-read-erase-read) cycles and retention characteristics of the device A. The bias condition of the programming, erasing, and reading was VGS = +150, −150, and −5 V.
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