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Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions
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10.1063/1.4745052
/content/aip/journal/jap/112/3/10.1063/1.4745052
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745052

Figures

Image of FIG. 1.
FIG. 1.

(a) The 1 × 1 μm2 AFM images and (b) the dot height histograms of InAs QDs with the same growth conditions as samples A and B.

Image of FIG. 2.
FIG. 2.

The normalized 10 K spectral responses of devices A and B at 2.0 V.

Image of FIG. 3.
FIG. 3.

(a) The 1 × 1 μm2 AFM image and (b) the dot height histogram of InAs QDs with the same growth conditions as sample C.

Image of FIG. 4.
FIG. 4.

The normalized 10 K spectral responses of devices A, B, and C at2.0 V.

Image of FIG. 5.
FIG. 5.

(a) The setup of the raster scan system and (b) the scanned thermal image and the picture of the hot solder head.

Tables

Generic image for table
Table I.

The wafer structures of the sample A, B, and C.

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/content/aip/journal/jap/112/3/10.1063/1.4745052
2012-08-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745052
10.1063/1.4745052
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