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Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration
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10.1063/1.4745858
/content/aip/journal/jap/112/3/10.1063/1.4745858
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745858
/content/aip/journal/jap/112/3/10.1063/1.4745858
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/content/aip/journal/jap/112/3/10.1063/1.4745858
2012-08-13
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745858
10.1063/1.4745858
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