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Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration
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10.1063/1.4745858
/content/aip/journal/jap/112/3/10.1063/1.4745858
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745858
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematic for the simulation (a) SG and (b) AG SNWFET. AG SNWFETs can be classified as two different types: wide source—narrow drain and narrow source—wide drain, according to the diameter (DNW) where the source and drain contacts are located.

Image of FIG. 2.
FIG. 2.

ID vs. VG of SNWFETs (LG = 20 nm) under the drain bias (VD). (a) VD = 0.05 V; (b) VD = 1 V. The black solid and dashed lines are SG SNWFET with DNW = 9 and 12 nm, respectively. The red line is WSND AG SNWFET with DNW = 12 nm for the source and 9 nm for the drain. The blue line is NSWD with the order of DNW reversed from the red case.

Image of FIG. 3.
FIG. 3.

ION and Vth vs. DNW of the narrow side for AG SNWFET with LG = 20 nm. The dashed line and open symbols are ION; the solid line and filled symbols are Vth. Two types of the AG SNWFET are compared and the red and blue colors indicate WSND and NSWD, respectively. At the top of the plot, a schematic for the change in the device geometry is shown.

Image of FIG. 4.
FIG. 4.

DIBL value vs. DNW of the narrow side for AG SNWFET with LG = 20 nm. Two types of the AG SNWFET are compared, and the red and blue colors indicate WSND and NSWD, respectively. The DIBL values are extracted at VD = 0.05 and 1 V.

Image of FIG. 5.
FIG. 5.

ID vs. VG under (a) VD = 0.05 V and (b) VD = 1 V. For all curves, WSND AG SNWFET (LG = 20 nm, DNW = 12 nm for source and 9 nm for drain side) is simulated and compared for each doping condition. The black solid lines are the SD case with NSD = 1019 cm−3 for both contacts. The red line is LSHD with NSRC = 1019 cm−3 and NDRN = 1020 cm−3. The blue line is HSLD with the order of NSRC and NDRN reversed from the red case.

Image of FIG. 6.
FIG. 6.

1D potential energy profile along the channel direction with different VD for VG = 1 V. (a) VD = 0.05 V; (b) VD = 1 V. The black solid lines are the SD case with NSD = 1019 cm−3 for the both contacts. Thered line is LSHD with NSRC = 1019 cm−3 and NDRN = 1020 cm−3. The blue line is HSLD with the order of NSRC and NDRN reversed from the red case.

Image of FIG. 7.
FIG. 7.

1D electron density profile along the channel direction with different VD for fixed VG = 1 V. (a) VD = 0.05 V; (b) VD = 1 V. The black solid lines are theSD case with NSD = 1019 cm−3 for both contacts. The red line is LSHD with NSRC = 1019 cm−3 and NDRN = 1020 cm−3. The blue line is HSLD with the order of NSRC and NDRN reversed from the red case.

Image of FIG. 8.
FIG. 8.

ID vs. VG with VD = 1 V. For all curves, WSND AG SNWFETs (LG = 20 nm, DNW = 12 nm for source and 9 nm for drain) are simulated and compared for each NDRN. The black solid lines are the SD case with NSD = 1019 cm−3 for both contact sides, whereas the colored lines are the LSHD cases with the fixed value of NSRC = 1019 cm−3. The red, green, and blue lines are for NDRN = 2 × 1019, 5 × 1019, and 1020 cm−3, respectively.

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/content/aip/journal/jap/112/3/10.1063/1.4745858
2012-08-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/3/10.1063/1.4745858
10.1063/1.4745858
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