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Schematic stack structures of perpendicular synthetic antiferromagnetic (left); schematic stack structures of top and bottom CoFeB-MgO based structures (right).
Area saturation magnetization, magnetic remanence, and coercivity as a function of CoFeB thickness for the top structure (left panel) and for the bottom structure (right panel).
Magnetic hysteresis loops for Sub/Ta/MgO/CoFeB/Ta/CoFeB/MgO/Ta. The thickness of Ta between CoFeB layers is stated in each individual case.
Hsat and Hflip as a function of the total thickness of the interlayer spacers.
Magnetic hysteresis loops for Sub/Ta/MgO/CoFeB/TaRuTa/CoFeB/MgO/Ta. The thickness of the Ru insertion is stated in each individual case.
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