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Role of Ti phases in the modulation of border traps at the TiO2/n-Si interfaces
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View: Figures


Image of FIG. 1.
FIG. 1.

A schematic of a typical TiO2/Si heterointerface. The conduction band offset (ΔEc = 0.05 eV) is much smaller than the valence band offset (ΔEv = 2.03 eV). The vacuum level from the bottom of the conduction bands are 3.2 eV and 4.05 eV for TiO2 and Si, respectively.

Image of FIG. 2.
FIG. 2.

CV hysteresis curves of (a) the as-grown TiO2 films, and then (b) annealed at 500 °C.

Image of FIG. 3.
FIG. 3.

Variation of the border trap density with growth temperature in the as-grown and annealed samples.

Image of FIG. 4.
FIG. 4.

The estimated number of cured defects as a function of growth temperature. The plot is the difference of densities in the as-grown and the annealed films.

Image of FIG. 5.
FIG. 5.

Normalized XPS spectra of the as-grown TiO2 films (left) grown at different temperatures and annealed at 500 °C (right).

Image of FIG. 6.
FIG. 6.

The Ti-2p3/2 XPS spectra of the as-grown (bold curves) and annealed (dashed curves) films grown at room temperature (RT), 300 °C, 400 °C.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of Ti phases in the modulation of border traps at the TiO2/n-Si interfaces