A schematic of a typical TiO2/Si heterointerface. The conduction band offset (ΔEc = 0.05 eV) is much smaller than the valence band offset (ΔEv = 2.03 eV). The vacuum level from the bottom of the conduction bands are 3.2 eV and 4.05 eV for TiO2 and Si, respectively.
CV hysteresis curves of (a) the as-grown TiO2 films, and then (b) annealed at 500 °C.
Variation of the border trap density with growth temperature in the as-grown and annealed samples.
The estimated number of cured defects as a function of growth temperature. The plot is the difference of densities in the as-grown and the annealed films.
Normalized XPS spectra of the as-grown TiO2 films (left) grown at different temperatures and annealed at 500 °C (right).
The Ti-2p3/2 XPS spectra of the as-grown (bold curves) and annealed (dashed curves) films grown at room temperature (RT), 300 °C, 400 °C.
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