(a) Schematic picture of the PETE device. is the absolute temperature of cathode, the absolute temperature of anode, V the output voltage, J the density of the output current, and R a resistor representing the external load. The energy bands of the device (b) in the thermodynamical equilibrium and (b) in the flat-band case, which often yields the highest power output. is the Fermi level, is the quasi Fermi level of electrons, q is the elementary charge, is the electron affinity of the cathode, and are the work functions of the cathode and the anode, is the valence band maximum, is the conduction band minimum, and is the vacuum energy level. Here the anode is metal, but it can be an N-type semiconductor as well.
Schematic picture of the cathode of the PETE device.
Efficiencies of PETE devices with silicon cathodes with various electron affinities as functions of the cathode temperature calculated using the numerical model with and and without surface recombination at the concentration of 1000 suns. The results from the rate-equation model2 were calculated with .
Efficiency of a PETE device with a silicon cathode and various back-surface recombination velocities as function of the cathode temperature calculated using the numerical (solid lines) and semi-analytical (dotted lines) models with , , , and at the concentration of 1000 suns.
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