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Resistance switch using metal nanogap electrodes in air
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10.1063/1.4748277
/content/aip/journal/jap/112/4/10.1063/1.4748277
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/4/10.1063/1.4748277
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the Pt nanogap electrode. (b) FE-SEM image of 10-nm-wide Pt nanogap electrode on a Si substrate coated with a 300-nm-thick SiO2 layer.

Image of FIG. 2.
FIG. 2.

(a) Typical electronic characteristics of Au-NGE observed at 10, 100, and 1000 Pa. The I–V measurements were conducted with a voltage sweep from 0 to 10 V (open red circles) and from 10 to 0 V (filled black circles). The electrodes were initially set to the “off” condition. (b) Pressure dependences of the occurrence of the three types of I-V shape in Au-NGE and Pt-NGE.

Image of FIG. 3.
FIG. 3.

(a) Typical I-V curves of Pt-NGE with current compliance at 1 μA in ambient environment. These measurements were conducted by a sweep from 0 to 8 V (open red circles) and from 8 to 0 V (filled black circles). The electrodes were initially set to the “off” condition. (b) Typical I-V curves observed in vacuum (filled black circles) and ambient air environments (open red circles). (c) Pressure dependences of Vp on N2 (filled blue circles) and O2 (open black circles) gases.

Image of FIG. 4.
FIG. 4.

Characteristics of repeated on/off cycles in ambient environment. The “on-to-off” process was performed with an 80-ms square wave at +3 V, and an 80-ms square wave with current compliance at 500 nA was employed for the “off-to-on” process. Reading was carried out at a voltage of +0.2 V.

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/content/aip/journal/jap/112/4/10.1063/1.4748277
2012-08-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistance switch using metal nanogap electrodes in air
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/4/10.1063/1.4748277
10.1063/1.4748277
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