1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC
Rent:
Rent this article for
USD
10.1063/1.4748279
/content/aip/journal/jap/112/4/10.1063/1.4748279
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/4/10.1063/1.4748279
/content/aip/journal/jap/112/4/10.1063/1.4748279
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/112/4/10.1063/1.4748279
2012-08-29
2014-09-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/4/10.1063/1.4748279
10.1063/1.4748279
SEARCH_EXPAND_ITEM