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Quantum beats of type-I and type-II excitons in an In x Ga1−x As/GaAs strained single quantum well
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View: Figures


Image of FIG. 1.
FIG. 1.

PR spectrum of the strained SQW sample at 10 K. The solid curve in the magnified spectrum is the fitted PR spectrum. The arrows indicate the excitonic transition energies. The inset shows a schematic diagram of the band configuration of the sample.

Image of FIG. 2.
FIG. 2.

Calculated results for the probability densities of the electrons, HH, and LH of (a) the type-I HH exciton and (b) the type-II LH exciton in the strained SQW structure.

Image of FIG. 3.
FIG. 3.

Pump-energy dependence of the time-domain reflectivity change signals in the strained SQW.

Image of FIG. 4.
FIG. 4.

Pump-energy dependence of the FT spectrum of the time-domain signal in the time region from 0.02 to 1.5 ps.

Image of FIG. 5.
FIG. 5.

Pump-energy dependence of the FT intensities of the excitonic quantum beat. The vertical dashed lines indicate the exciton energies.

Image of FIG. 6.
FIG. 6.

Fitting result (solid curve) with a damped harmonic oscillation for the quantum beat oscillation, where the open circles indicate the experimental result.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum beats of type-I and type-II excitons in an InxGa1−xAs/GaAs strained single quantum well