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Characterization of local piezoelectric behavior of ferroelectric GeTe and Ge2Sb2Te5 thin films
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10.1063/1.4746087
/content/aip/journal/jap/112/5/10.1063/1.4746087
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4746087
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependencies of dielectric constant (a) and reciprocal dielectric constant (b) for the GeTe film.

Image of FIG. 2.
FIG. 2.

Temperature dependencies of dielectric constant (a) and reciprocal dielectric constant (b) for the Ge2Sb2Te5 film.

Image of FIG. 3.
FIG. 3.

Images of surface topography (a), PFM amplitude (b), and PFM phase (c) of a crystalline GeTe film.

Image of FIG. 4.
FIG. 4.

Images of surface topography (a), PFM amplitude (b), and PFM phase (c) of a NaCl-type crystalline Ge2Sb2Te5 film.

Image of FIG. 5.
FIG. 5.

Images of RT-PFM on a GeSbTe film. Topography (a), resonance frequencies from 310 kHz to 330 kHz (b), PFM amplitude (c), and PFM phase (d).

Image of FIG. 6.
FIG. 6.

Images of RT-PFM on a GeTe film. Topography (a), resonance frequencies from 228 kHz to 275 kHz (b), PFM amplitude (c), and PFM phase (d).

Image of FIG. 7.
FIG. 7.

Ferroelectric mark obtained with DC electric field in the GeTe film. Topography (a), PFM amplitude (b), and PFM phase (c).

Image of FIG. 8.
FIG. 8.

Ferroelectric mark obtained with DC electric field in the Ge2Sb2Te5 film. Topography (a), PFM amplitude (b), and PFM phase (c).

Image of FIG. 9.
FIG. 9.

Hysteresis loops obtained in the GeTe film. Phase loop marks as dash line with circles, amplitude — continuous line. Insert shows the amplitude and phase of PZT film measured in the comercial PFM system.

Image of FIG. 10.
FIG. 10.

Hysteresis loops obtained in the Ge2Sb2Te5 thin film. Phase loop marks as dash line with circles, amplitude — continuous line. Insert shows the amplitude and phase of PZT film measured in our PFM system.

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/content/aip/journal/jap/112/5/10.1063/1.4746087
2012-09-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of local piezoelectric behavior of ferroelectric GeTe and Ge2Sb2Te5 thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4746087
10.1063/1.4746087
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