Schematic of the SPR process on InGaAs.
Comparison of CTLM and RTLM structures.
Specific contact resistance data with varying second step annealing times () and diffusion barrier thicknesses.
Specific contact resistance data for varying second step annealing temperatures (40 s time) and Pd/Si ratios.
Bright field XTEM of as-deposited contact.
(a) Bright field XTEM showing first-step anneal of contact structure (inset: SAD pattern of silicon (bright) layer); (b) HAADF STEM image.
(a) Bright field XTEM and (b)HAADF STEM images after second-step anneal showing that the silicide remaining only reacts approximately 5–7 nm into the semiconductor epilayer at some points (dashed line shows original interface); (c) contacting layer and FFT image.
XTEM of second step anneal.
Specific contact resistance data for varying Pd/Si ratios at (a) and (b) second step annealing temperatures for 40 s.
Specific contact resistances plotted over a range of temperatures and dopant concentrations for a specific SBH. Measured for lightly doped SPR contact with ratio 1.5 and annealed at for 30 s and for 40 s is also plotted.
Required doping density vs. SBH at T = 300 K to obtain the average measured (a) for the heavily doped SPR contact and (b) for the lightly doped SPR contact. For N D , the . Using , the doping density required to obtain measured is .
Deposited metal layers and deposition conditions.
Contact structure thicknesses, atomic ratios between Pd and Si layers, and notes.
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