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Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs
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10.1063/1.4748178
/content/aip/journal/jap/112/5/10.1063/1.4748178
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4748178

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the SPR process on InGaAs.

Image of FIG. 2.
FIG. 2.

Comparison of CTLM and RTLM structures.

Image of FIG. 3.
FIG. 3.

Specific contact resistance data with varying second step annealing times () and diffusion barrier thicknesses.

Image of FIG. 4.
FIG. 4.

Specific contact resistance data for varying second step annealing temperatures (40 s time) and Pd/Si ratios.

Image of FIG. 5.
FIG. 5.

Bright field XTEM of as-deposited contact.

Image of FIG. 6.
FIG. 6.

(a) Bright field XTEM showing first-step anneal of contact structure (inset: SAD pattern of silicon (bright) layer); (b) HAADF STEM image.

Image of FIG. 7.
FIG. 7.

(a) Bright field XTEM and (b)HAADF STEM images after second-step anneal showing that the silicide remaining only reacts approximately 5–7 nm into the semiconductor epilayer at some points (dashed line shows original interface); (c) contacting layer and FFT image.

Image of FIG. 8.
FIG. 8.

XTEM of second step anneal.

Image of FIG. 9.
FIG. 9.

Specific contact resistance data for varying Pd/Si ratios at (a) and (b) second step annealing temperatures for 40 s.

Image of FIG. 10.
FIG. 10.

Specific contact resistances plotted over a range of temperatures and dopant concentrations for a specific SBH. Measured for lightly doped SPR contact with ratio 1.5 and annealed at for 30 s and for 40 s is also plotted.

Image of FIG. 11.
FIG. 11.

Required doping density vs. SBH at T = 300 K to obtain the average measured (a) for the heavily doped SPR contact and (b) for the lightly doped SPR contact. For N D , the . Using , the doping density required to obtain measured is .

Tables

Generic image for table
Table I.

Deposited metal layers and deposition conditions.

Generic image for table
Table II.

Contact structure thicknesses, atomic ratios between Pd and Si layers, and notes.

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/content/aip/journal/jap/112/5/10.1063/1.4748178
2012-09-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4748178
10.1063/1.4748178
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