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High permittivity 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 relaxor thin films for high-value, wide-temperature capacitor applications
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10.1063/1.4751028
/content/aip/journal/jap/112/5/10.1063/1.4751028
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4751028
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD θ−2θ scans of the sol-gel-derived PMNT thin film grown on PZT-buffered Pt(111)/TiO2/SiO2/Si substrate. The inset figure is a cross-sectional SEM image for microstructural characterization of the PMNT thin film.

Image of FIG. 2.
FIG. 2.

Dielectric constant as a function of dc bias for the PMNT film, measured at different temperatures.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the dielectric constant at zero bias and the dielectric tunability under an applied electric field E = 333 kV/cm for the PMNT film.

Image of FIG. 4.
FIG. 4.

Dielectric constant and loss tangent as a function of dc bias for the PMNT thin film, measured at different temperatures.

Image of FIG. 5.
FIG. 5.

P-E loops, measured at different frequencies, for the PMNT thin film.

Image of FIG. 6.
FIG. 6.

Transverse piezoelectric e 31 coefficient measurement for the PMNT thin film.

Image of FIG. 7.
FIG. 7.

Variation of leakage current density (J) with the applied dc electric field (E) for the PMNT thin film. The insets show that with the increase in dc electric field, the best fits are obtained, respectively, in the low field region for ohmic law and in the high field region for FN tunneling mechanism.

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/content/aip/journal/jap/112/5/10.1063/1.4751028
2012-09-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High permittivity 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 relaxor thin films for high-value, wide-temperature capacitor applications
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4751028
10.1063/1.4751028
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