XRD θ−2θ scans of the sol-gel-derived PMNT thin film grown on PZT-buffered Pt(111)/TiO2/SiO2/Si substrate. The inset figure is a cross-sectional SEM image for microstructural characterization of the PMNT thin film.
Dielectric constant as a function of dc bias for the PMNT film, measured at different temperatures.
Temperature dependence of the dielectric constant at zero bias and the dielectric tunability under an applied electric field E = 333 kV/cm for the PMNT film.
Dielectric constant and loss tangent as a function of dc bias for the PMNT thin film, measured at different temperatures.
P-E loops, measured at different frequencies, for the PMNT thin film.
Transverse piezoelectric e 31 coefficient measurement for the PMNT thin film.
Variation of leakage current density (J) with the applied dc electric field (E) for the PMNT thin film. The insets show that with the increase in dc electric field, the best fits are obtained, respectively, in the low field region for ohmic law and in the high field region for FN tunneling mechanism.
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