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Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap
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10.1063/1.4751267
/content/aip/journal/jap/112/5/10.1063/1.4751267
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4751267
/content/aip/journal/jap/112/5/10.1063/1.4751267
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/content/aip/journal/jap/112/5/10.1063/1.4751267
2012-09-11
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4751267
10.1063/1.4751267
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