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Controlled axial and radial Te-doping of GaAs nanowires
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Image of FIG. 1.
FIG. 1.

High resolution TEM images of the interface formed between the NP and the Te-doped NW for the case of post-growth cooling under (a) TBAs/H2 (type A) and (b) H2 (type B). The DETe flow was 0.08 μmol/min with TG  = 410 °C. (c)and (d) EDS line-scans taken across the middle of the NP into the NWs shown in (a) and (b), respectively. The EDS spectra are normalized to the Au counts.

Image of FIG. 2.
FIG. 2.

J-V characteristics of the type A (square data) and type B (circular and triangular data) Te-doped GaAs NWs (d = 230 ± 20 nm) with DETe flow of 0.08 μmol/min (square and circular markers) and a type B NW with the DETe flow of 0.009 μmol/min (triangular markers). Solid lines are the fit to Eq. (1). The inset shows an SEM image of a nanoprobe contacting the Au end of a Te-doped GaAs NW grown at 410 °C.

Image of FIG. 3.
FIG. 3.

Plot of ρ* versus diameter (measured at the middle of each NW) of NWs grown at 410 °C and 380 °C with a DETe flow of 0.08 μmol/min. The inset shows the resistivity (ρ) of the NWs grown at different temperatures. The solid lines are fits based on Eq. (3).

Image of FIG. 4.
FIG. 4.

J-V characteristic of an undoped core/Te-doped shell GaAs NW (with DETe flow of 0.08 μmol/min). The lower right inset shows a BF TEM image and a schematic structure is shown in the upper left inset.

Image of FIG. 5.
FIG. 5.

Log-log plot of a J-V characteristic (forward bias) of an undoped GaAs NW grown at 410 °C with d = 180 nm and L = 9 μm. The inset shows the corresponding linear J-V curve.


Generic image for table
Table I.

Summary of the ideality factor, n, zero bias barrier height, φ 0 b , resistivity, ρ, and the estimated doping level, ne , of the NWs presented in Fig. 2. Type A NWs were cooled under TBAs vapor, while type B NWs were cooled under H2 only.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled axial and radial Te-doping of GaAs nanowires