High resolution TEM images of the interface formed between the NP and the Te-doped NW for the case of post-growth cooling under (a) TBAs/H2 (type A) and (b) H2 (type B). The DETe flow was 0.08 μmol/min with TG = 410 °C. (c)and (d) EDS line-scans taken across the middle of the NP into the NWs shown in (a) and (b), respectively. The EDS spectra are normalized to the Au counts.
J-V characteristics of the type A (square data) and type B (circular and triangular data) Te-doped GaAs NWs (d = 230 ± 20 nm) with DETe flow of 0.08 μmol/min (square and circular markers) and a type B NW with the DETe flow of 0.009 μmol/min (triangular markers). Solid lines are the fit to Eq. (1). The inset shows an SEM image of a nanoprobe contacting the Au end of a Te-doped GaAs NW grown at 410 °C.
Plot of ρ* versus diameter (measured at the middle of each NW) of NWs grown at 410 °C and 380 °C with a DETe flow of 0.08 μmol/min. The inset shows the resistivity (ρ) of the NWs grown at different temperatures. The solid lines are fits based on Eq. (3).
J-V characteristic of an undoped core/Te-doped shell GaAs NW (with DETe flow of 0.08 μmol/min). The lower right inset shows a BF TEM image and a schematic structure is shown in the upper left inset.
Log-log plot of a J-V characteristic (forward bias) of an undoped GaAs NW grown at 410 °C with d = 180 nm and L = 9 μm. The inset shows the corresponding linear J-V curve.
Summary of the ideality factor, n, zero bias barrier height, φ 0 b , resistivity, ρ, and the estimated doping level, ne , of the NWs presented in Fig. 2. Type A NWs were cooled under TBAs vapor, while type B NWs were cooled under H2 only.
Article metrics loading...
Full text loading...