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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
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10.1063/1.4752254
/content/aip/journal/jap/112/5/10.1063/1.4752254
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4752254
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The measured C-V curves at room temperature for samples 1–4 (a) and samples 5–8 (b).

Image of FIG. 2.
FIG. 2.

The calculated 2DEG electron density n2D under different gate biases at room temperature for samples 1–4 (a) and samples 5–8 (b).

Image of FIG. 3.
FIG. 3.

The measured I-V curves at room temperature for samples 1–4.

Image of FIG. 4.
FIG. 4.

The measured I-V curves at room temperature for samples 5–8.

Image of FIG. 5.
FIG. 5.

The relationship between the electron mobility of the 2DEG and the applied gate bias at room temperature for samples 1–4 (a), samples 5–8 (b).

Image of FIG. 6.
FIG. 6.

The SEM-EDS composition map in the areas around 1 μm apart from the Ohmic contact (spectrum 1) and around 10 μm apart from the Ohmic contact (spectrum 2) for one of the In0.18Al0.82N/AlN/GaN HFET samples.

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/content/aip/journal/jap/112/5/10.1063/1.4752254
2012-09-14
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/5/10.1063/1.4752254
10.1063/1.4752254
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