(a) The proposed tilted-polarizer device structure. m and M are the magnetization vectors of the free and fixed layers, respectively. M lies in the x-z, plane with angle with respect to the x-axis. Here, the x-y plane is the easy plane (the film plane), with the x-axis being the easy axis. (b) Schematic representation of the device's switching phase diagram.
(a) Analytical phase diagram of the structure of the TP device for small to medium electric current, i.e., . The inset shows the dependence of the final static states on the initial condition. (b) Analytical phase diagram for the TP device in the high-J region, . (c) Effect of the free-layer saturation magnetization on the boundary of the S/N region of the phase diagram from Fig. 2(a) . (d) The effect of the damping coefficient on the oscillatory region (L) of the phase diagram in (a). Here, for simplicity, only the region of positive J is shown. Inset is the plot of the oscillatory region dependence on and .
Micromagnetic simulation results of the trajectories of the S and N states at and (a) , (b) .
Average magnetization precession of the L states by micromagnetic simulation at (a) , and (c) . The corresponding frequency spectra are shown in (b) and (d), respectively.
Precession frequency dependence on the current density J and the tilt angle .
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