_{1−}

_{ x }Sn

_{ x }CFe

_{3}(0 ≤

*x*≤ 1)

^{1}, B. S. Wang

^{1,a)}, P. Tong

^{1}, Y. N. Huang

^{1}, Z. H. Huang

^{2}, Y. Liu

^{1}, S. G. Tan

^{1}, W. J. Lu

^{1}, B. C. Zhao

^{1}, W. H. Song

^{1}and Y. P. Sun

^{1,2,a)}

### Abstract

We report the magnetic phase diagram of antiperovskite compounds Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 1). The effects of the ratio of Zn/Sn on the structure, magnetic and electrical transport properties have been investigated systematically. With increasing the Sn content *x*, the lattice constant increases while both the Curie temperature (*T* _{C}) and the saturated magnetization decrease gradually. All the resistivity curves of Zn_{1−} _{ x }Sn_{ x }CFe_{3} show a metal-like behavior in measured temperature range (2–350 K). In particular, the *T* ^{2}-power-law dependence of the electrical resistivity is obtained at low temperatures for all samples with *x* ≤ 0.3. It is noteworthy that, for *x* = 0.1, the *T* _{C} is tuned just at the room temperature (∼300 K). Around *T* _{C}, the magnetocaloric effect is considerably large with a magnetic entropy change of 2.78 J/kg K (Δ*H* = 45 kOe) as well as a relative cooling power (RCP) of 320 J/kg (Δ*H* = 45 kOe). Considering the considerably large RCP, suitable working temperature, inexpensive and innoxious raw materials,Zn_{0.9}Sn_{0.1}CFe_{3} is suggested to be a promising candidate for practical application in magnetic refrigeration.

This work was supported by the National Key Basic Research under Contract No. 2011CBA00111 and the National Natural Science Foundation of China under Contract Nos. 51001094, 51171177, 11174295, 10804111 and Director's Fund of Hefei Institutes of Physical Science, Chinese Academy of Sciences.

I. INTRODUCTION

II. EXPERIMENTAL DETAILS

III. RESULTS AND DISCUSSION

IV. CONCLUSIONS

### Key Topics

- Zinc
- 44.0
- Magnetic materials
- 14.0
- Electrical resistivity
- 11.0
- Magnetic fields
- 10.0
- Lattice constants
- 7.0

## Figures

(a) Room-temperature x-ray powder diffractions for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 1.0). (b) The enlargement of XRD patterns around the peak (111) for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 1.0). (c) The lattice parameter *a* as a function of *x* for the samples with 0 ≤ *x* ≤ 1.0.

(a) Room-temperature x-ray powder diffractions for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 1.0). (b) The enlargement of XRD patterns around the peak (111) for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 1.0). (c) The lattice parameter *a* as a function of *x* for the samples with 0 ≤ *x* ≤ 1.0.

(a) Temperature dependent magnetization *M*(*T*)/*M*(5 K) curves under ZFC process at 100 Oe for Zn_{1−} _{ x }Sn_{ x }CFe_{3}. (b) Temperature dependence of *dM/dT* for Zn_{1−} _{ x }Sn_{ x }CFe_{3}; the inset presents the enlargement of *dM/dT*(T) curves for the samples with 0.8 ≤ *x* ≤ 1.0. (c) Magnetic field dependence of magnetization *M*(*H*) curves for Zn_{1−} _{ x }Sn_{ x }CFe_{3} at 5 K. (d) Enlargement of *M*(*H*) curves at positive *H*; the inset shows *x*-dependent *M _{S} * for Zn

_{1−}

_{ x }Sn

_{ x }CFe

_{3}.

(a) Temperature dependent magnetization *M*(*T*)/*M*(5 K) curves under ZFC process at 100 Oe for Zn_{1−} _{ x }Sn_{ x }CFe_{3}. (b) Temperature dependence of *dM/dT* for Zn_{1−} _{ x }Sn_{ x }CFe_{3}; the inset presents the enlargement of *dM/dT*(T) curves for the samples with 0.8 ≤ *x* ≤ 1.0. (c) Magnetic field dependence of magnetization *M*(*H*) curves for Zn_{1−} _{ x }Sn_{ x }CFe_{3} at 5 K. (d) Enlargement of *M*(*H*) curves at positive *H*; the inset shows *x*-dependent *M _{S} * for Zn

_{1−}

_{ x }Sn

_{ x }CFe

_{3}.

Temperature dependent magnetization *M*(*T*) curves measured at 10 Oe under ZFC/FC processes for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0.8 ≤ *x* ≤ 1.0). (b) The magnetic phase diagram of Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 1.0).

Temperature dependent magnetization *M*(*T*) curves measured at 10 Oe under ZFC/FC processes for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0.8 ≤ *x* ≤ 1.0). (b) The magnetic phase diagram of Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 1.0).

(a) The normalized resistivity *ρ*(*T*)/*ρ*(350 K) dependence of temperature at zero field for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 0.3); the inset shows the resistivity *ρ*(*T*) for the samples with 0 ≤ *x* ≤ 0.3. (b) The normalized resistivity *ρ*(*T*)/*ρ*(350 K) dependence of temperature at zero field for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0.8 ≤ *x* ≤ 1.0); the inset shows the resistivity *ρ*(*T*) for the samples with 0.8 ≤ *x* ≤ 1.0. (c) The lower-*T ρ*(*T*) data plotted as *ρ*(*T*)/*ρ*(350 K) vs. T^{2} for the samples with 0.05 ≤ *x* ≤ 0.3. (d) Linear fits of *ρ*(*T*)/*ρ*(350 K) data for the samples with 0.05 ≤ *x* ≤ 0.3 between 70 and 150 K.

(a) The normalized resistivity *ρ*(*T*)/*ρ*(350 K) dependence of temperature at zero field for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0 ≤ *x* ≤ 0.3); the inset shows the resistivity *ρ*(*T*) for the samples with 0 ≤ *x* ≤ 0.3. (b) The normalized resistivity *ρ*(*T*)/*ρ*(350 K) dependence of temperature at zero field for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0.8 ≤ *x* ≤ 1.0); the inset shows the resistivity *ρ*(*T*) for the samples with 0.8 ≤ *x* ≤ 1.0. (c) The lower-*T ρ*(*T*) data plotted as *ρ*(*T*)/*ρ*(350 K) vs. T^{2} for the samples with 0.05 ≤ *x* ≤ 0.3. (d) Linear fits of *ρ*(*T*)/*ρ*(350 K) data for the samples with 0.05 ≤ *x* ≤ 0.3 between 70 and 150 K.

Temperature dependent *M*(*T*)/*M*(5 K)_{ZFC} curves and normalized resistivity *ρ*(*T*)/*ρ*(350 K) at zero field for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0.05 ≤ *x* ≤ 0.3): (a)*x* = 0.05; (b) *x* = 0.1; (c) *x* = 0.2; (d) *x* = 0.3.

Temperature dependent *M*(*T*)/*M*(5 K)_{ZFC} curves and normalized resistivity *ρ*(*T*)/*ρ*(350 K) at zero field for Zn_{1−} _{ x }Sn_{ x }CFe_{3} (0.05 ≤ *x* ≤ 0.3): (a)*x* = 0.05; (b) *x* = 0.1; (c) *x* = 0.2; (d) *x* = 0.3.

(a) Temperature dependence of magnetization *M*(*T*) curves for Zn_{0.9}Sn_{0.1}CFe_{3} at various magnetic fields up to 45 kOe between 200 and 350 K; the inset shows the Arrott plots deduced from *M*(*H*) curves around *T _{C} *. (b) Magnetic entropy change

*−ΔS*as a function of temperature (200–350 K) under different magnetic field changes of Δ

_{M}*H*= 3, 5, 10, 20, 30, and 45 kOe for Zn

_{0.9}Sn

_{0.1}CFe

_{3}; inset shows the plot of the maximum magnetic entropy change vs.

*H*

^{2/3}for Zn

_{0.9}Sn

_{0.1}CFe

_{3}; the red line indicates the linear fitting results according to Eq. (2). (c) The −Δ

*S*

_{M}-

*T*curve for magnetic field change Δ

*H*= 45 kOe; inset shows

*H*-dependent RCP. (d) The comparison of RCP of Zn

_{0.9}Sn

_{0.1}CFe

_{3}(Δ

*H*= 45 kOe) with those of potential candidates for magnetic refrigerator; the dashed line is guide to the eye.

(a) Temperature dependence of magnetization *M*(*T*) curves for Zn_{0.9}Sn_{0.1}CFe_{3} at various magnetic fields up to 45 kOe between 200 and 350 K; the inset shows the Arrott plots deduced from *M*(*H*) curves around *T _{C} *. (b) Magnetic entropy change

*−ΔS*as a function of temperature (200–350 K) under different magnetic field changes of Δ

_{M}*H*= 3, 5, 10, 20, 30, and 45 kOe for Zn

_{0.9}Sn

_{0.1}CFe

_{3}; inset shows the plot of the maximum magnetic entropy change vs.

*H*

^{2/3}for Zn

_{0.9}Sn

_{0.1}CFe

_{3}; the red line indicates the linear fitting results according to Eq. (2). (c) The −Δ

*S*

_{M}-

*T*curve for magnetic field change Δ

*H*= 45 kOe; inset shows

*H*-dependent RCP. (d) The comparison of RCP of Zn

_{0.9}Sn

_{0.1}CFe

_{3}(Δ

*H*= 45 kOe) with those of potential candidates for magnetic refrigerator; the dashed line is guide to the eye.

Article metrics loading...

Full text loading...

Commenting has been disabled for this content