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The band structure of the proposed hybrid structure material consisting of six InAs DWELL layers and GINA QW on n++ GaAs substrate together with cross-sectional transmission electron microscopy image of the active region and with detailed active region composition of the hybrid p-i-n sample.
PL spectra of separate InAs QD and GINA QW intrinsic samples at (a) room temperature and (b) at 14 K. The temperature dependent PL peak energy emission proving minimal carrier localization effect in the intrinsic QW sample is shown in inset. (c) Low (14 K) temperature reverse bias voltage (0 V-6 V) dependent PL of hybrid QD-QW showing the QCSE within the QW. The inset shows the fitted QW peak wavelength as a function of bias and its redshift of 15 nm, while the QDs indicate no shift in wavelength.
The TRPL streak images at 0.0 V, −4.0 V, and −8.0 V showing bothwavelength positions and temporal dynamics of the QD and QW states. (b) RBV (0.0 V-8.0 V) dependent PL decay curves of GINA QW revealing its shortening due to the heavy-hole tunnelling at low 14 K temperature. Inset shows that GINA QW extracted decay times exponentially follow the RBV applied, i.e., from 150 ps at 0.0 V down to 74 ps at −8.0 V, while QD GS decay times are unaffected with constant value of 1400 ps.
Temperature dependent (13-290 K) TRPL measurement of GINA QW showing first the thermal activation of NRR centers responsible for radiative recombination decay time shortening and further shortening due to the hole leakage (thermionic emission) at elevated (>190 K) temperature.
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